APTML100U60R020T1AG MICROSEMI, APTML100U60R020T1AG Datasheet
APTML100U60R020T1AG
Specifications of APTML100U60R020T1AG
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APTML100U60R020T1AG Summary of contents
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... Gate - Source Voltage GS R Drain - Source ON Resistance DSon P Maximum Power Dissipation D In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTML100U60R020T1AG V = 1000V DSS R = 600mΩ typ @ Tj = 25°C DSon I = 20A @ Tc = 25°C D Application • ...
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... V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTML100U60R020T1AG = 25°C unless otherwise specified j Test Conditions V = 1000V ; 25° 800V ; 125°C ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTML100U60R020T1AG www.microsemi.com 3 – 3 ...