IRG4PH30K-E International Rectifier, IRG4PH30K-E Datasheet - Page 2

IRG4PH30K-E

Manufacturer Part Number
IRG4PH30K-E
Description
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH30K-E

Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
20A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Not Compliant
IRG4PH30K
Notes:
Q
R
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
∆V
V
V
∆V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
d(off)
f
sc
d(on)
d(off)
f
r
r
fe
E
(BR)CES
(BR)ECS
GE(th)
on
off
ts
ts
CE(ON)
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
2
CC
/∆T
= 80%(V
/∆T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage —
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
=23Ω,
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
4.3
18
10
S
T
U
0.19
3.10
3.90
3.01
0.64
0.92
1.56
3.18
200
110
310
330
800
-12
6.5
9.0
53
21
28
23
27
26
13
60
14
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2000
±100
250
300
170
4.2
6.0
2.0
2.4
80
14
32
mV/°C V
V/°C
µA
nC
mJ
mJ
nH
nA
ns
µs
pF
V
ns
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
C
CC
GE
GE
CC
GE
GE
GE
CC
C
C
= 10A
= 25°C
=10A, V
= 150°C,
= 10A, V
= 10A , T
= 10A
= 20A
= V
= 100 V, I
= 0V, I
= 0V, I
= 0V, I
= V
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 15V, R
= 720V, T
= 15V, R
= 15V, R
= 0V
= 400V
= 15V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CC
C
CE
CE
CE
C
CC
J
= 2.0mA
= 250µA
= 1.0A
= 150°C
= 250µA
= 250µA
G
G
G
C
= 1200V
= 10V, T
= 1200V, T
= 960V
J
= 960V
= 23Ω
= 23Ω
= 23Ω
= 10A
= 125°C
See Fig.8
See Fig. 7
J
www.irf.com
V
= 25°C
See Fig.2, 5
J
GE
= 150°C
= 15V

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