NE85639-T1-A California Eastern Labs, NE85639-T1-A Datasheet - Page 4

• Manufacturer Part Number: NE85639-T1-A
• Manufacturer: California Eastern Labs

Specifications of NE85639-T1-A

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 3V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 50
• Power Dissipation: 200mW
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-143
• Lead Free Status / RoHS Status: Compliant

TYPICAL PERFORMANCE CURVES
10
16
14
12
10
10
25
20
15
7
3
5
2
1
8
4
6
5
0
1
1
0.1
V
f = 1 GHz
V
AND MAXIMUM AVAILABLE GAIN
CE
CE
GAIN BANDWIDTH PRODUCT
FORWARD INSERTION GAIN
2
vs. COLLECTOR CURRENT
= 10 V
= 10 V
2
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
0.2
INSERTION GAIN vs.
3
3
vs. FREQUENCY
Frequency, f (GHz)
5
5
0.3
NE85634
7
7 10
10
|S
0.5
21E
|
2
C
20 30
0.7
20 30
C
(mA)
(mA)
MAG
NE85632
NE85634
NE85633
V
I
NE85633
NE85635
NE85632
NE85634
C
1.0
CE
= 20 mA
= 10 V
(T
50 70 100
50 70 100
A
= 25 °C)
2.0
-80
-70
-60
-50
-40
-30
10
24
16
12
20
15
20
25
-5
5
0
8
4
0
0.1
20
1
AND MAXIMUM AVAILABLE GAIN
INTERMODULATION DISTORTION
V
CE
FORWARD INSERTION GAIN
0.2 0.3
vs. COLLECTOR CURRENT
= 10 V
2
COLLECTOR CURRENT
30
Collector Current, I
NE85632 AND NE85634
Collector Current, I
INSERTION GAIN vs.
Frequency, f (GHz)
vs. FREQUENCY
V
V
R
IM
IM
CE
O
G
0.5
2
3
= 100 dBμV/50 Ω
5
= R
f = 2
= 10 V
f = 90 + 100 MHz
NE85635
NE85635
40
L
= 50 Ω
X
10
200-190 MHz
1
|S
50
21E
20
2
f = 2 GHz
|
C
f = 500 MHz
f = 1 GHz
2
C
NE856 SERIES
(mA)
V
I
C
(mA)
CE
= 20 mA
MAG
60
= 10 V
50
IM
IM
5
2
3
100
70
10