JANTX2N5303 MICROSEMI, JANTX2N5303 Datasheet
JANTX2N5303
Manufacturer Part Number
JANTX2N5303
Description
Manufacturer
MICROSEMI
Datasheet
1.JANTX2N5303.pdf
(2 pages)
Specifications of JANTX2N5303
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
20A
Dc Current Gain (min)
40
Power Dissipation
5W
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-3
Lead Free Status / RoHS Status
Not Compliant
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/456
Devices
2N5302
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1) Derate linearly 28.57 mW/
2) Derate linearly 1.14 W/
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Breakdown Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
I
V
V
V
V
V
V
V
C
CE
CE
EB
BE
BE
CE
CE
= 200 mAdc, I
= 60 Vdc, I
= 80 Vdc, I
= 5.0 Vdc, I
= 1.5 Vdc, V
= 1.5 Vdc, V
= 60 Vdc
= 80 Vdc
Characteristics
B
B
C
B
= 0
= 0
CE
CE
= 0
Ratings
= 0
= 60 V
= 80 V
0
C for T
Characteristics
0
C for T
dc
dc
@ T
@ T
C
= +100
A
A
C
= +100
= +25
= +25
0
C
0
0
C
C
0
C
(1)
2N5302
2N5303
2N5302
2N5303
2N5302
2N5303
2N5302
2N5303
(2)
2N5303
Symbol
Symbol
T
V
V
V
R
J
,
P
CBO
I
I
CEO
EBO
C
B
T
T
JC
stg
2N5302
60
60
30
-65 to +200
Max.
0.875
115
5.0
7.5
5.0
V
Symbol
2N5303
(BR)
I
I
I
I
CBO
CEO
EBO
CEX
80
80
20
CEO
TECHNICAL DATA
W/
0
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
C/W
W
0
C
0
Min.
C
60
80
*See appendix A for
package outline
Qualified Level
Max.
5.0
5.0
5.0
5.0
5.0
10
10
(TO-204AA)
JANTXV
JANTX
TO-3*
Page 1 of 2
Unit
Vdc
120101
Adc
Adc
Adc
Adc
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JANTX2N5303 Summary of contents
Page 1
NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristics ON CHARACTERISTICS Forward-Current Transfer Ratio I = 1.0 Adc 2.0 Vdc Adc 2.0 Vdc Adc 2.0 Vdc ...