MMDT5551-7-F Diodes Zetex, MMDT5551-7-F Datasheet - Page 2

• Manufacturer Part Number: MMDT5551-7-F
• Manufacturer: Diodes Zetex

Specifications of MMDT5551-7-F

• Transistor Polarity: NPN
• Number Of Elements: 2
• Collector-emitter Voltage: 160V
• Collector-base Voltage(max): 180V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 80
• Power Dissipation: 200mW
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
DS30172 Rev. 8 - 2
200
150
100
6. Short duration pulse test used to minimize self-heating effect.
50
0
0
25
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
A
Characteristic
50
Ambient Temperature
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
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V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
h
CBO
EBO
h
NF
f
FE
obo
T
2 of 4
fe
Min
180
160
100
6.0
80
80
30
50
⎯
⎯
⎯
⎯
⎯
⎯
0.12
0.15
0.14
0.13
0.09
0.08
0.07
0.06
0.05
0.04
0.11
0.10
Max
0.15
0.20
250
250
300
1.0
6.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
1
I
I
C
B
= 10
Fig. 2, Collector Emitter Saturation Voltage
MHz
Unit
nA
μA
nA
pF
dB
⎯
⎯
V
V
V
V
V
I , COLLECTOR CURRENT (mA)
C
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
V
V
R
10
C
C
E
C
C
C
C
C
C
C
vs. Collector Current
CB
CB
EB
CB
CE
CE
CE
S
= 10μA, I
= 10mA, I
= 10mA, I
= 100μA, I
= 1.0mA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 50mA, I
= 50mA, I
= 1.0kΩ, f = 1.0kHz
T = 150°C
= 4.0V, I
= 10V, I
= 5.0V, I
= 120V, I
= 120V, I
= 10V, f = 1.0MHz, I
= 10V, I
A
C
Test Condition
B
B
B
B
C
C
C
E
B
C
= 0
E
E
T = -50°C
CE
CE
CE
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA, f = 1.0kHz
= 10mA, f = 100MHz
= 0
= 0
= 0
= 200μA,
A
= 0
= 0, T
100
= 5.0V
= 5.0V
= 5.0V
A
= 100°C
T = 25°C
© Diodes Incorporated
E
A
= 0
MMDT5551
1,000