J110-E3 Vishay, J110-E3 Datasheet - Page 5

• Manufacturer Part Number: J110-E3
• Manufacturer: Vishay

Specifications of J110-E3

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): 25V
• Drain-gate Voltage (max): -25V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Compliant

V
R
I
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
D(on)
GS(L
L
*Non-inductive
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
*
100
0.1
)
10
1
10
–g
b
fg
Common Gate Forward Admittance
J/SST108
fg
150 W
–12 V
10 mA
20
f – Frequency (MHz)
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
J/SST
150 W
10 mA
–7 V
1
09
T
V
I
D
100
A
DG
50
0.1
10
= 20 mA
= 25_C
1
= 20 V
10
J/SST110
T
V
I
D
A
DG
150 W
10 mA
= 20 mA
–5 V
= 25_C
Common Gate Output Admittance
= 20 V
100
_
20
f – Frequency (MHz)
V
V
0.01
50
GS(H)
GS(L)
1.0
0.1
10
g
og
b
10
og
T
V
I
D
A
DG
= 20 mA
–g
–b
= 25_C
Common Gate Reverse Admittance
Scope
= 20 V
V
rg
rg
IN
100
20
f – Frequency (MHz)
1 k
51
J/SST108 Series
Vishay Siliconix
51
50
V
DD
R
L
www.vishay.com
OUT
100
7-5