J201-E3 Vishay, J201-E3 Datasheet
J201-E3
Specifications of J201-E3
Related parts for J201-E3
J201-E3 Summary of contents
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... J/SST201 −0.3 to −1.5 J/SST202 −0.8 to −4 J/SST204 −0.3 to −2 FEATURES D Low Cutoff Voltage: J201 <1 High Input Impedance D Very Low Noise D High Gain DESCRIPTION The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. ...
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... J/SST201 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Lead Temperature ( / ” from case for 10 sec Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS ...
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... S-40393—Rev. G, 15-Mar-04 = 25_C UNLESS OTHERWISE NOTED 100 DSS 0 −4 − −4 − −0.1 V −0.2 V −0.3 V −0 J/SST201 Series Vishay Siliconix Gate Leakage Current 500 100 125_C 125_C GSS I = 500 25_C 25_C GSS − Drain-Gate Voltage (V) DG Common-Source Forward Transconductance vs. Drain Current ...
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... J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (T Transfer Characteristics 500 V = −0.7 V GS(off) 400 T = −55_C A 300 25_C 200 125_C 100 0 0 −0.1 −0.2 −0.3 V − Gate-Source Voltage (V) GS Transconductance vs. Gate-Source Voltage 1 −0.7 V GS(off) 1 −55_C A 25_C 0.9 0.6 125_C 0 −0.1 −0.2 −0.3 V − Gate-Source Voltage (V) GS Circuit Voltage Gain vs ...
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... S-40393—Rev. G, 15-Mar-04 = 25_C UNLESS OTHERWISE NOTED) A −16 − kHz = −55_C 125_C −0.1 −0.2 −0.3 −0.4 0.5 0.4 J/SST201 Series Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz −4 −8 −12 V − Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...