APT30GT60BR MICROSEMI, APT30GT60BR Datasheet - Page 5

no-image

APT30GT60BR

Manufacturer Part Number
APT30GT60BR
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of APT30GT60BR

Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT30GT60BR
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT30GT60BRD
Manufacturer:
NXP
Quantity:
20 000
Part Number:
APT30GT60BRG
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT30GT60BRG
Manufacturer:
MICREL/麦瑞
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
3,000
1,000
0.60
0.50
0.40
0.30
0.20
0.10
500
100
Junction
temp. (°C)
50
10
V
0
CE
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
10
D = 0.9
0.05
0.5
0.3
0.1
0.7
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.0838
0.207
0.209
10
30
-4
40
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
oes
ies
res
0.00245
0.00548
0.165
50
10
-3
140
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
5
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 10Ω
120
100
= 400V
Figure 18,Minimim Switching Safe Operating Area
-2
80
60
40
20
15
0
°
I
°
C
C
0
C
, COLLECTOR CURRENT (A)
V
CE
100
25
, COLLECTOR TO EMITTER VOLTAGE
200
35
Note:
300
Peak T J = P DM x Z θJC + T C
10
45
Duty Factor D =
-1
400
t 1
55
t 2
500
65
t 1
APT30GT60BR(G)
/
600
t 2
F
f
f
P
max1
max2
max
diss
1.0
700
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f

Related parts for APT30GT60BR