TIM5964-60SL-422 Toshiba, TIM5964-60SL-422 Datasheet
TIM5964-60SL-422
Specifications of TIM5964-60SL-422
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TIM5964-60SL-422 Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-60SL-422 HIGH GAIN G1dB=8.0dB at 5.85GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED FET ...
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... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-60SL-422 SYMBOL ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅13. Pin=40.0dBm 5.6 Output Power(Pout) vs. Input Power(Pin) 51 freq.=6.75GHz 50 V =10V DS I set≅9. TIM5964-60SL-422 5.8 6.0 6.2 6.4 Frequency(GHz) Pout ηadd 37 39 Pin(dBm) 3 6.6 6.8 7 ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 200 100 IM3 vs. Power Characteristics -10 V =10V DS I set≅9.5A DS freq.=6.75GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-60SL-422 80 120 Tc( ° 200 160 40 42 ...