SST111-T-E3 Vishay, SST111-T-E3 Datasheet
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SST111-T-E3
Specifications of SST111-T-E3
Related parts for SST111-T-E3
SST111-T-E3 Summary of contents
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... ON D Low Leakage Low Capacitance Low Insertion Loss The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. J/SST113 are useful in a high-gain amplifier mode. The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability ...
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... J/SST111 Series Vishay Siliconix _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS Gate Operating Current I G Drain Cutoff Current I D(off) Drain-Source On-Resistance r DS(on) Gate-Source Forward Voltage V GS(F) Dynamic Common-Source Forward ...
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... Document Number: 70232 S-04028—Rev. E, 04-Jun-01 _ 200 = 0 160 I DSS 120 –8 – –2 V GS(off) –4 V – 105 125 ) –2 V GS(off J/SST111 Series Vishay Siliconix On-Resistance vs. Drain Current 100 –2 V GS(off –4 V – – Drain Current (mA) D Turn-On Switching 5 t approximately independent ...
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... J/SST111 Series Vishay Siliconix Noise Voltage vs. Frequency 100 100 – Frequency (Hz) Gate Leakage Current 125_C 100 25_C 0 – Drain-Gate Voltage (V) DG Common-Gate Forward Admittance 100 25_C A – 0.1 100 200 f – Frequency (MHz) www.vishay.com 7-4 _ Forward Transconductance and Output Conductance 50 40 ...
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... PRF 1 MHz Document Number: 70232 S-04028—Rev. E, 04-Jun- 500 1000 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 0.8 1.0 J/SST113 –5 V 3200 W V GS( GS(L) J/SST111 Series Vishay Siliconix Output Characteristics 100 V = –4 V GS(off – Drain-Source Voltage (V) DS Transfer Characteristics 100 V = – GS(off) DS ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...