LM4954TLX National Semiconductor, LM4954TLX Datasheet - Page 5

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LM4954TLX

Manufacturer Part Number
LM4954TLX
Description
Manufacturer
National Semiconductor
Datasheet

Specifications of LM4954TLX

Operational Class
Class-AB
Audio Amplifier Output Configuration
1-Channel Mono
Output Power (typ)
1.2x1@8OhmW
Audio Amplifier Function
Speaker
Total Harmonic Distortion
0.1@8Ohm@600mW%
Single Supply Voltage (typ)
3/5V
Dual Supply Voltage (typ)
Not RequiredV
Power Supply Requirement
Single
Rail/rail I/o Type
No
Power Supply Rejection Ratio
80dB
Single Supply Voltage (min)
2.7V
Single Supply Voltage (max)
9V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
9
Package Type
uSMD
Lead Free Status / RoHS Status
Not Compliant
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
allowable power dissipation is P
derating curves for additional information.
Note 4: Human body model, 100pF discharged through a 1.5kΩ resistor.
Note 5: Machine Model, 220pF – 240pF discharged through all pins.
Note 6: Typical specifications are specified at 25˚C and represent the parametric norm.
Note 7: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 9: Shutdown current is measured in a normal room environment. Exposure to direct sunlight in the TL package will increase I
Note 10: All bumps have the same thermal resistance and contribute equally when used to lower thermal resistance. The θ
is for the ITL package without any heat spreading planes on the PCB.
Note 11: The demo board shown has 1.1in
V
Performance Characteristics section. 7V operation requires heat spreading planes for the thermal stability.
External Components Description
Components
DD
(Figure 1)
1.
2.
3.
4.
5.
while the top internal and bottom layers are electrically GND. Thermal performance for the demo board is found on the Power Derating graph in the Typical
C
C
R
C
R
S
B
i
i
f
Inverting input resistance which sets the closed-loop gain in conjunction with R
high pass filter with C
Input coupling capacitor which blocks the DC voltage at the amplifiers input terminals. Also creates a
highpass filter with R
for an explanation of how to determine the value of C
Feedback resistance which sets the closed-loop gain in conjunction with R
Supply bypass capacitor which provides power supply filtering. Refer to the Power Supply Bypassing
section for information concerning proper placement and selection of the supply bypass capacitor.
Bypass pin capacitor which provides half-supply filtering. Refer to the section, Proper Selection of External
Components, for information concerning proper placement and selection of C
DMAX
= (T
JMAX
2
(710mm
– T
i
i
at f
A
at f
2
) / θ
) heat spreading planes on the two internal layers and the bottom layer. The bottom internal layer is electrically
c
C
JA
= 1/(2π R
= 1/(2π R
or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4954, see power
i
C
i
C
i
). Refer to the section, Proper Selection of External Components,
i
).
Functional Description
5
i
.
JMAX
, θ
JA
, and the ambient temperature T
i
. A
VD
B
JA
f
. This resistor also forms a
.
in the Thermal Resistance section
= 2 * (R
SD
by a minimum of 2µA.
f
/R
i
).
A
. The maximum
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