DJT4030P-13 Diodes Zetex, DJT4030P-13 Datasheet - Page 2

• Manufacturer Part Number: DJT4030P-13
• Description: Trans GP BJT PNP 40V 3A 4-Pin (3+Tab) SOT-223 T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of DJT4030P-13

• Package: 4SOT-223
• Supplier Package: SOT-223
• Pin Count: 4
• Minimum Dc Current Gain: 220@0.5A@1V|200@1A@1V|100@3A@1V
• Maximum Operating Frequency: 150(Typ) MHz
• Maximum Dc Collector Current: 3 A
• Maximum Base Emitter Saturation Voltage: 1@0.1A@1A V
• Maximum Collector Emitter Saturation Voltage: 0.15@5mA@0.5A|0.2@10mA@1A|0.5@0.3A@3A V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 6 V

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DJT4030P
Document number: DS31590 Rev. 2 - 2
2.0
1.6
1.2
0.8
0.4
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
25
T , AMBIENT TEMPERATURE ( C)
Characteristic
A
(Note 3)
50
75
@T
(Note 4)
A
100
= 25°C unless otherwise specified
°
125
V
V
V
V
R
Symbol
V
150
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
C
h
CBO
EBO
www.diodes.com
t
t
f
t
obo
on
t
off
t
FE
t
ibo
T
d
s
r
f
2 of 5
Min
220
200
100
-40
-40
-6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.01
0.1
10
1
Typ
150
150
180
146
35
53
12
41
34
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.1
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
vs. Collector-Emitter Voltage (Note 3)
Max
-100
-100
-150
-200
-500
400
167
-1.0
-1.0
-50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Typical Collector Current
DC
1
MHz
Unit
mV
mΩ
nA
μA
nA
pF
pF
ns
ns
ns
ns
ns
ns
⎯
V
V
V
V
V
Pw = 100ms
I
I
I
V
V
V
V
V
V
I
I
I
I
I
V
V
f = 100MHz
V
V
V
I
V
I
C
C
E
C
C
C
E
C
B1
B1
CB
CB
EB
CE
CE
CE
CE
CE
CB
CB
CC
CC
= -100μA
= -10mA
= -50μA
= -0.5A, I
= -1A, I
= -3A, I
= -3A, I
= -1A, I
= -200mA
= I
Pw = 10ms
= -40V, I
= -40V, I
= -6V, I
= -1V, I
= -1V, I
= -1V, I
= -2V, I
= -10V, I
= -10V, f = 1MHz
= -5V, f = 1MHz
= -10V, I
= -10V, I
B2
10
Test Conditions
= -200mA
Pw = 1ms
B
B
B
B
= -10mA
= -0.3A
= -0.3A
= -0.1A
C
C
C
C
B
C
E
E
C
C
C
= 0
= -5mA
= -0.5A
= -1A
= -3A
= -1A
= 0
= 0, T
= -2A,
= -100mA,
= -2A,
DJT4030P
© Diodes Incorporated
A
March 2009
= 150°C
100