SI4012-C1001GTR Silicon Laboratories Inc, SI4012-C1001GTR Datasheet - Page 7

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SI4012-C1001GTR

Manufacturer Part Number
SI4012-C1001GTR
Description
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of SI4012-C1001GTR

Lead Free Status / RoHS Status
Supplier Unconfirmed
Table 5. Low Battery Detector Characteristics
(TA = 25° C, VDD = 3.3 V, RL = 550 , unless otherwise noted)
Table 6. Optional Crystal Oscillator Characteristics
(TA = 25° C, VDD = 3.3 V, RL = 600 , unless otherwise noted)
Parameter
Battery Voltage Measurement
Accuracy
Parameter
Crystal Frequency Range
Input Capacitance
Crystal ESR
Start-Up Time
Crystal oscillator only,
60 mH motional arm
Test Condition
Test Condition
inductance
Rev 0.2
Min
Min
10
Typ
Typ
2
5
9
Max
Max
Si4012
13
50
Unit
Unit
MHz
ms
pF
%
7

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