LMX2313USLDX/NOPB National Semiconductor, LMX2313USLDX/NOPB Datasheet

IC FREQ SYNTH 600MHZ 20LAMTCSP

LMX2313USLDX/NOPB

Manufacturer Part Number
LMX2313USLDX/NOPB
Description
IC FREQ SYNTH 600MHZ 20LAMTCSP
Manufacturer
National Semiconductor
Series
PLLatinum™r
Type
PLL Frequency Synthesizerr
Datasheet

Specifications of LMX2313USLDX/NOPB

Pll
Yes
Input
CMOS, TTL
Output
CMOS
Number Of Circuits
1
Ratio - Input:output
2:1
Differential - Input:output
Yes/No
Frequency - Max
600MHz
Divider/multiplier
Yes/No
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
20-Laminate TCSP
Frequency-max
600MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
LMX2313USLDX
LMX2313USLDXTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LMX2313USLDX/NOPB
Manufacturer:
EXAR
Quantity:
1 769
© 2003 National Semiconductor Corporation
LMX2310U/LMX2311U/LMX2312U/LMX2313U
PLLatinum
RF Personal Communications
LMX2310U 2.5 GHz
LMX2312U 1.2 GHz
General Description
The LMX2310/1/2/3U are high performance frequency syn-
thesizers. The LMX2310/1/2U use a selectable, dual modu-
lus 32/33 and 16/17 prescaler. The LMX2313U uses a se-
lectable, dual modulus 16/17 and 8/9 prescaler. The device,
when combined with a high quality reference oscillator and a
voltage controlled oscillator, generates very stable, low noise
local oscillator signals for up and down conversion in wire-
less communication devices.
Serial data is transferred into LMX2310/1/2/3U via a three-
wire interface (Data, Enable, Clock) that can be directly
interfaced with low voltage baseband processors. Supply
voltage can range from 2.7V to 5.5V. LMX2310U features
very low current consumption, typically 2.3 mA at 3.0V.
The LMX2310/1/2/3U are manufactured using National’s
0.5µ ABiC V silicon BiCMOS process and is available in
20-pin CSP packages.
Functional Block Diagram
PLLatinum
is a trademark of National Semiconductor Corporation.
Ultra Low Power Frequency Synthesizer for
DS200438
LMX2311U 2.0 GHz
LMX2313U 600 MHz
Features
n RF operation up to 2.5 GHz
n 2.7V to 5.5V operation
n Ultra Low Current Consumption
n Low prescaler values
n Excellent Phase Noise
n Internal balanced, low leakage charge pump
n Selectable Charge Pump Current Levels
n Selectable Fastlock mode with Time-Out Counter
n Low Voltage MICROWIRE interface (1.72V to V
n Digital and Analog Lock Detect
n Small 20-pad Thin Chip Scale Package
Applications
n Cellular DCS, PCS, WCDMA telephone systems
n Wireless Local Area Networks (WLAN)
n Global Positioning Systems (GPS)
n Other wireless communications systems
LMX2310/1/2U 32/33 or 16/17
LMX2313U 16/17 or 8/9
20043822
December 2003
www.national.com
CC
)

Related parts for LMX2313USLDX/NOPB

LMX2313USLDX/NOPB Summary of contents

Page 1

... The LMX2310/1/2/3U are manufactured using National’s 0.5µ ABiC V silicon BiCMOS process and is available in 20-pin CSP packages. Functional Block Diagram PLLatinum ™ trademark of National Semiconductor Corporation. © 2003 National Semiconductor Corporation LMX2311U 2.0 GHz LMX2313U 600 MHz Features n RF operation up to 2.5 GHz n 2 ...

Page 2

Connection Diagram www.national.com 20-Pin Thin Chip Scale Package NS Package Number SLD20A 2 20043823 ...

Page 3

Pin Descriptions Pin Number Pin Name I — No Connect Charge Pump output. For connection GND — Analog ground INB 6 OSC — ...

Page 4

Pin Descriptions (Continued) Pin Number Pin Name Data GND µ www.national.com I/O Description — No Connect. I High impedance CMOS ...

Page 5

... Absolute Maximum Ratings 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage µC Voltage on any pin with GND= FL OSC , OSC ( OUT i Data, Clock, LE, CE, FoLD ( Storage Temperature Range Electrical Characteristics < ...

Page 6

Electrical Characteristics < 3.0V, −40˚ µC A Symbol Parameter CHARGE PUMP ICPo- source ICPo- Charge Pump Output sink Current (Note 7) ICPo- source ICPo- sink ICPo- Charge Pump TRI-STATE tri Current ...

Page 7

Electrical Characteristics < 3.0V, −40˚ µC A Symbol Parameter PHASE NOISE CHARACTERISTICS Normalized Single L (f) N Side-Band Phase Noise Single Side-Band Phase L(f) Noise Note 1: Absolute Maximum Ratings indicate ...

Page 8

Note 12: Phase Noise is measured using a reference evaluation board with a loop bandwidth of approximately 12 kHz. The phase noise specification is the composite average of 3 measurements made at frequency offsets of 2.0 kHz, 2.5 kHz and ...

Page 9

Typical Performance Characteristics (Continued) LMX231xU Charge Pump Sweeps 9 20043842 www.national.com ...

Page 10

Typical Performance Characteristics Charge Pump Current Variation (See formula under Charge Pump Current Specification Definitions) www.national.com (Continued) Sink Vs Source Mismatch (See formula under Charge Pump Current Specification Definitions) 20043866 LMX2310U F Sensitivity vs Frequency at 3. 20043867 ...

Page 11

Typical Performance Characteristics LMX2310U F LMX2311U F (Continued) Sensitivity vs Frequency at 5.5V in Sensitivity vs Frequency at 3. 20043847 20043848 www.national.com ...

Page 12

Typical Performance Characteristics www.national.com (Continued) LMX2311U F Sensitivity vs Frequency at 5.5V in LMX2312U F Sensitivity vs Frequency at 3. 20043849 20043850 ...

Page 13

Typical Performance Characteristics LMX2312U F LMX2313U F (Continued) Sensitivity vs Frequency at 5.5V in Sensitivity vs Frequency at 3. 20043851 20043852 www.national.com ...

Page 14

Typical Performance Characteristics www.national.com (Continued) LMX2313U F Sensitivity vs Frequency at 5.5V in LMX231XU OSC Sensitivity vs Frequency at 3. 20043853 20043854 ...

Page 15

Typical Performance Characteristics LMX231XU OSC LMX231xU OSC (Continued) Sensitivity vs Frequency at 5.5V in Input Impedance vs Frequency in 15 20043855 20043858 www.national.com ...

Page 16

Typical Performance Characteristics OSC BUFFER IN NORMAL OPERATION Imag- Real F inary |ZOSC | OSC IN ZOSC IN (MHz) ZOSC (Ω) IN (Ω) (Ω) 2 12900 −1500 13000 4 5200 −10900 12100 7 2400 −7500 ...

Page 17

Typical Performance Characteristics (Continued) LMX231xU F Input Impedance vs Frequency in V =3.0V 25˚ LMX231xU F Input Impedance vs Frequency in V =5.5V 25˚ 20043856 20043857 www.national.com ...

Page 18

Typical Performance Characteristics POWERED-UP Real Imaginary F | (MHz) (Ω) (Ω) (Ω) 100 452 −325 557 200 305 −278 413 300 225 −243 331 400 180 ...

Page 19

Charge Pump Measurement Definitions − ∆ sink current at VCP = sink current at VCP = ∆ sink current at VCP ...

Page 20

Serial Data Input Timing Notes: 1. Data shifted into register on Clock rising edge. 2. Data is shifted in MSB first. F Sensitivity Test Setup IN Notes: 1. LMX2310/1/2U Test Conditions: NA_CNTR = 16, NB_CNTR = 312 ...

Page 21

OSC Sensitivity Test Setup IN Notes: 1. Test Conditions: R_CNTR = 1000, FoLD2 = 1, FoLD1 = 0, FoLD0 = 1, PWDN = 0. 2. Sensitivity limit is reached when the frequency error of the divided RF input is greater ...

Page 22

... Functional Description The basic phase-lock-loop (PLL) configuration consists of a high-stability crystal reference oscillator, a frequency synthe- sizer such as the National Semiconductor LMX2310/1/2/3U, a voltage controlled oscillator (VCO), and a passive loop filter. The frequency synthesizer includes a phase detector, a current mode charge pump, as well as a programmable reference divider and feedback frequency divider ...

Page 23

Functional Description 1.5 PHASE/FREQUENCY DETECTORS The phase/frequency detector is driven from the N and R COUNTER outputs. The maximum frequency at the phase detector inputs is 10 MHz. The phase detector outputs con- Phase Comparator and Internal Charge Pump ...

Page 24

Functional Description 1.9 Fastlock ™ OUTPUT The FL pin can be used as the Fastlock output. The FL pin can also be programmed as constant low, constant high (referenced constant high impedance, selectable CC through ...

Page 25

Power-Down The LMX2310/1/2/3U are power controlled through logical control of the CE pin in conjunction with programming of the PDWN and CPo_TRI bits. A truth table is provided that describes how the state of the CE pin, the PDWN ...

Page 26

Programming Description 3.2 R REGISTER The R register contains the R_CNTR control word and PD_POL, CPo_4X, CP_TRI, FoLD0, FoLD1 control bits. The detailed descriptions and programming information for each control word is discussed in the following sections. Register Most ...

Page 27

Programming Description 3.2.5 FoLD2,1,0 FoLD Output Truth Table The FoLD2, FoLD1 and FoLD0 are used to select which signal is routed to FoLD pin. T[14] R[21] FoLD2 FoLD1 ...

Page 28

Programming Description 3.3.3 B_CNTR[12:0] B COUNTER The NB_CNTR control word is used to program the B counter. The B counter is a 13-bit binary counter used in the programmable feedback divider. The B counter can be programmed to values ...

Page 29

... BANNED SUBSTANCE COMPLIANCE National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. ...

Related keywords