SI4122G-BM Silicon Laboratories Inc, SI4122G-BM Datasheet

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SI4122G-BM

Manufacturer Part Number
SI4122G-BM
Description
IC SYNTHESIZER GSM RF2/IF 28MLP
Manufacturer
Silicon Laboratories Inc
Type
Frequency Synthesizerr
Datasheet

Specifications of SI4122G-BM

Pll
Yes
Input
Clock
Output
Clock
Number Of Circuits
1
Ratio - Input:output
1:2
Differential - Input:output
No/No
Frequency - Max
1.5GHz
Divider/multiplier
Yes/No
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-20°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Frequency-max
1.5GHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
336-1105
D
F
Features
Applications
Description
The Si4133G is a monolithic integrated circuit that performs both IF and
dual-band RF synthesis for GSM and GPRS wireless communications
applications. The Si4133G includes three VCOs, loop filters, reference
and VCO dividers, and phase detectors. Divider and powerdown settings
are programmable with a three-wire serial interface.
Functional Block Diagram
Rev. 1.4 5/03
AUXOUT
SDATA
PWDN
O R
U A L
SCLK
SEN
Dual-band RF Synthesizers
IF synthesizer: 500 to
1000 MHz
Integrated VCOs, loop filters,
varactors, and resonators
Minimal number of external
components required
GSM 850, E-GSM 900, DCS 1800, and PCS 1900 cellular
telephones
GPRS data terminals
HSCSD data terminals
XIN
RF1: 900 MHz to 1.8 GHz
RF2: 750 MHz to 1.5 GHz
G S M
- B
Reference
Amplifier
Interface
Register
Control
Power
Down
Serial
22-bit
A N D
Data
Test
Mux
A N D
R F S
÷
65
G P R S W
Y N T H E S I Z E R
Phase
Detector
Phase
Detector
Phase
Detector
Copyright © 2003 by Silicon Laboratories
Fast settling time: 140 µs
GPRS Class 12 compliant
Low phase noise
Programmable powerdown modes
1 µA standby current
18 mA typical supply current
2.7 to 3.6 V operation
Packages: 24-pin TSSOP and
28-pin MLP
I R E L E S S
÷
÷
÷
N
N
N
RF1
RF2
IF
W
I T H
C
O M M U N I C A T I O N S
I
N T E G R A T E D
Si4123G/22G/13G/12G
RFLA
RFLB
RFOUT
RFLC
RFLD
IFOUT
IFLA
IFLB
Patents pending
GNDR
GNDR
GNDR
RFLD
RFLC
RFLB
RFLA
V C O
SDATA
RFOUT
GNDR
GNDR
GNDR
GNDR
VDDR
SCLK
RFLD
RFLC
RFLB
RFLA
1
2
3
4
5
6
7
Ordering Information:
28
8
Pin Assignments
S
Si4133G-BM
1
2
3
4
5
6
7
8
9
10
11
12
Si4133G-BT
27
See page 28.
9
26
10
GND
Pad
Si4133G
25
11
24
12
Si4133G-DS14
24
23
22
21
20
19
18
17
16
15
14
13
23
13
22
14
SEN
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDN
AUXOUT
21
20
19
18
17
16
15
GNDI
GNDD
VDDD
GNDD
XIN
IFLB
IFLA

Related parts for SI4122G-BM

SI4122G-BM Summary of contents

Page 1

Features Dual-band RF Synthesizers ...

Page 2

Si4133G 2 Rev. 1.4 ...

Page 3

Section Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

Si4133G Electrical Specifications Table 1. Recommended Operating Conditions Parameter Ambient Temperature Supply Voltage Supply Voltages Difference Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at 3.0 V and an operating ...

Page 5

Table 3. DC Characteristics (V = 2 – ° Parameter 1 Typical Supply Current 1 RF1 Mode Supply Current 1 RF2 Mode Supply Current 1 IF Mode Supply Current Standby Current ...

Page 6

Si4133G Table 4. Serial Interface Timing (V = 2 – ° Parameter SCLK Cycle Time SCLK Rise Time SCLK Fall Time SCLK High Time SCLK Low Time 2 SDATA Setup ...

Page 7

SCLK SDATA D17 t en1 SEN Figure 2. Serial Interface Timing Diagram First bit c loc ked hold D16 D15 ...

Page 8

Si4133G Table 5. RF and IF Synthesizer Characteristics (V = 2 – ° Parameter XIN Input Frequency Reference Amplifier Sensitivity Phase Detector Update Frequency RF1 Center Frequency Range RF2 Center ...

Page 9

RF and IF synthesizers settled to within 0.1 ppm frequency error. t pup PWDN SEN PDIB = 1 SDATA PDRB = 1 Figure 4. Software Power Management Timing Diagram RF and IF synthesizers settled to within 0.1 ...

Page 10

Si4133G TRACE A: Ch1 FM Gate Time A Offset 800 Hz Real 160 Hz /div -800 Hz Start Figure 6. Typical Transient Response RF1 at 1.6 GHz with 200 kHz Phase Detector Update Frequency 10 133.59375 us Stop: ...

Page 11

Offset Frequency (Hz) Figure 7. Typical RF1 Phase Noise at 1.6 GHz with 200 kHz Phase Detector Update Frequency Figure 8. Typical RF1 Spurious Response at 1.6 ...

Page 12

Si4133G −60 −70 −80 −90 −100 −110 −120 −130 −140 2 10 Figure 9. Typical RF2 Phase Noise at 1.2 GHz with 200 kHz Phase Detector Update Frequency Figure 10. Typical RF2 Spurious Response at 1.2 GHz with 200 kHz ...

Page 13

Offset Frequency (Hz) Figure 11. Typical IF Phase Noise at 550 MHz with 200 kHz Phase Detector Update Frequency Figure 12. IF Spurious Response at 550 MHz ...

Page 14

Si4133G Typical Application Circuits From System Controller Printed Trace Inductors 560 RFOUT µF 0.022 From System Controller 1 GNDR 2 RFLD 3 RFLC Printed Trace 4 GNDR Inductors 5 RFLB 6 RFLA 7 GNDR V DD PWDN ...

Page 15

Functional Description The Si4133G is a monolithic integrated circuit that performs IF and dual-band RF synthesis for wireless applications such as GSM 850, E-GSM 900, DCS 1800, and PCS 1900. Its fast transient response also makes the Si4133G especially well ...

Page 16

Si4133G Table 6. Si4133G-BT VCO Characteristics VCO F Range C L CEN NOM PKG (MHz) (pF) (nH) Min Max RF1 947 1720 4.3 2.0 RF2 789 1429 4.8 2.3 IF 526 952 6.5 2.1 Table 7. Si4133G-BM VCO Characteristics VCO ...

Page 17

RF PLL nears the limit of its compensation range LDETB is also high when either PLL is executing the self-tuning algorithm. The output frequency is still locked when LDETB goes high, but the PLL eventually loses lock if the ...

Page 18

Si4133G 560 pF IFOUT L MATCH Figure 17. IFOUT 50 Ω Test Circuit Table 8. L Values MATCH Frequency 500–600 MHz 600–800 MHz 800–1 GHz The IF output level is dependent upon the load. Figure 18 displays the output level ...

Page 19

Table 9. Powerdown Configuration PWDN Pin AUTOPDB PDIB x x PWDN = PWDN = Rev. 1.4 Si4133G RF PDRB IF Circuitry Circuitry x OFF OFF 0 OFF OFF ...

Page 20

Si4133G Control Registers Register Name Bit Bit Main 0 0 Configuration 1 Reserved 2 Powerdown RF1 N-Divider 4 RF2 N-Divider N-Divider Reserved . . . 15 Reserved Note: ...

Page 21

Register 0. Main Configuration Address Field = A[3:0] = 0000 Bit D17 D16 D15 D14 D13 D12 D11 D10 D9 Name AUXSEL Bit Name 17:14 Reserved 13:12 AUXSEL [1:0] 11:6 Reserved 5 LPWR 4 Reserved 3 ...

Page 22

... PDIB 0 PDRB Register 3. RF1 N-Divider Address Field (A[3:0]) = 0011 Bit D17 D16 D15 D14 D13 D12 D11 D10 Name Bit Name 17:0 N [17:0] N-Divider for RF1 Synthesizer. RF1 Register reserved for Si4122G. Writes to this register can result in unpredictable behavior Function Program to zero. ...

Page 23

Register 4. RF2 N-Divider Address Field = A[3:0] = 0100 Bit D17 D16 D15 D14 D13 D12 D11 D10 Name 0 Bit Name 17 Reserved Program to zero. 16:0 N [16:0] N-Divider for RF2 Synthesizer. RF2 Register reserved for Si4123G. ...

Page 24

Si4133G Pin Descriptions: Si4133G-BT Pin Number Name Description 1 SCLK Serial clock input 2 SDATA Serial data input 3 GNDR Common ground for RF analog circuitry 4 RFLD Pins for inductor connection to RF2 VCO 5 RFLC Pins for inductor ...

Page 25

... Table 11. Pin Descriptions for Si4133G Derivatives—TSSOP Pin Number Si4133G-BT Si4123G-BT Si4122G-BT Si4113G-BT 1 SCLK SCLK 2 SDATA SDATA 3 GNDR GNDR 4 RFLD GNDR 5 RFLC GNDR 6 GNDR GNDR 7 RFLB RFLB 8 RFLA RFLA 9 GNDR GNDR 10 GNDR GNDR 11 RFOUT RFOUT 12 VDDR VDDR 13 AUXOUT AUXOUT 14 PWDN PWDN ...

Page 26

Si4133G Pin Descriptions: Si4133G-BM Pin Number Name Description 1 GNDR Common ground for RF analog circuitry 2 RFLD Pins for inductor connection to RF2 VCO 3 RFLC Pins for inductor connection to RF2 VCO 4 GNDR Common ground for RF ...

Page 27

... Table 12. Pin Descriptions for Si4133G Derivatives—MLP Pin Number Si4133G-BM Si4123G-BM Si4122G-BM Si4113G-BM 1 GNDR GNDR 2 RFLD GNDR 3 RFLC GNDR 4 GNDR GNDR 5 RFLB RFLB 6 RFLA RFLA 7 GNDR GNDR 8 GNDR GNDR 9 GNDR GNDR 10 RFOUT RFOUT 11 VDDR VDDR 12 AUXOUT AUXOUT 13 PWDN PWDN 14 GNDD GNDD ...

Page 28

... Number Si4133G-BT* Si4133G-BM Si4123G-BT* Si4123G-BM Si4122G-BT* Si4122G-BM Si4113G-BT* Si4113G-BM *Note: TSSOP not recommended for new designs. Si4133G Derivative Devices The Si4133G performs both IF and dual-band RF frequency synthesis. The Si4113G, Si4122G, and the Si4123G are derivatives of this device. Table 13 outlines which synthesizers each derivative device features as well as which pins and registers coincide with each synthesizer ...

Page 29

Package Outline: Si4133G-BT Figure 19 illustrates the package details for the Si4133G-BT. Table 14 lists the values for the dimensions shown in the illustration. D γ Figure 19. 24-Pin Thin Shrink Small Outline Package (TSSOP) Table 14. Package Diagram Dimensions ...

Page 30

Si4133G Package Outline: Si4133G-BM Figure 20 illustrates the package details for the Si4133G-BM. Table 15 lists the values for the dimensions shown in the illustration D TOP VIEW Figure 20. 28-Pin Micro ...

Page 31

Document Change List Revision 1.3 to Revision 1.4 TSSOP outline updated. Rev. 1.4 Si4133G 31 ...

Page 32

... Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages. Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brand names mentioned herein are trademarks or registered trademarks of their respective holders. ...

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