M41T315V-85MH6F STMicroelectronics, M41T315V-85MH6F Datasheet
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M41T315V-85MH6F
Specifications of M41T315V-85MH6F
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M41T315V-85MH6F Summary of contents
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... Choice of power-fail deselect voltages power-fail deselect voltage) PFD (a) – M41T315Y : V = 4.5 to 5.5V CC 4.25V ≤ V ≤ 4.50V PFD – M41T315V 3.0 to 3.6V CC 2.80V ≤ V ≤ 2.97V PFD – M41T315W 2.7 to 3.3V CC 2.60V ≤ V ≤ 2.70V PFD ■ No address space required to communicate with RTC ■ ...
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Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 2. Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 3. AC electrical characteristics (M41T315Y Table 4. AC electrical characteristics (M41T315V/ Table 5. RTC register map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 6. Ablolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Table 7. DC and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 8. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 9. DC characteristics Table 10. Crystal electrical characteristics (externally supplied Table 11 ...
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List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Description The M41T315Y/V/W RTC Supervisor is a combination of a CMOS TIMEKEEPER nonvolatile memory supervisor. Power is constantly monitored by the memory supervisor. In the event of power instability or absence, an external battery maintains the timekeeping operation and ...
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... WE V CCO V CCI 6/30 V CCI V CCO D (1) XI (1) XO M41T315Y M41T315V WE M41T315W CEI OE RST (1) V BAT V SS 32.768 KHz crystal connection Data input Data output Reset input Chip enable output Chip enable input Battery input Output enable input WRITE enable input Switched supply voltage output ...
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... Figure 2. 16-pin SOIC connections BAT ( Figure 3. 28-pin SOIC connections CCI CCO M41T315Y 4 13 RST M41T315V M41T315W CEI CEO AI03909 CCI CCO M41T315Y RST M41T315V M41T315W CEI CEO AI03910 7/30 ...
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Figure 4. Block diagram CEO CEI OE WE RST CCI 8/30 XO 32,768 Hz CLOCK/CALENDAR LOGIC CRYSTAL XI UPDATE READ WRITE TIMEKEEPER REGISTER CONTROL LOGIC POWER-FAIL ACCESS ENABLE SEQUENCE DETECTOR I/O DATA BUFFERS INTERNAL V CC POWER-FAIL ...
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Figure 5. M41T315Y/V/W to RAM/clock interface A0- RST A0-An DATA I/O CMOS WE SRAM CEO V CCO M41T315Y/V/W CEI Q RST V CCI V BAT ...
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Operation Figure 6 on page 11 describe the signals and functions. Communication with the clock is established by pattern recognition of a serial bit stream of 64 bits which must be matched by executing 64 consecutive WRITE cycles containing ...
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Table 2. Operating modes Mode V CC Deselect 4.5 to 5.5V or WRITE 3.0 to 3.6V READ or 2.7 to 3.3V READ (1) Deselect (min) SO PFD (1) ≤ V Deselect SO 1. See Table 11 on ...
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Figure 7. Write mode waveforms OE WE CEI D Table 3. AC electrical characteristics (M41T315Y) Symbol Parameter t t READ cycle time AVAV CEI access time ELQV access time GLQV ...
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... Table 4. AC electrical characteristics (M41T315V/W) Symbol Parameter t t READ cycle time AVAV CEI access time ELQV access time GLQV CEI to output low Z ELQX COE output low Z GLQX OEE t t CEI to output high Z EHQZ output high Z GHQZ ODO t READ recovery CEI pulse width ...
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Figure 8. Comparison register definition 7 BYTE 0 1 BYTE 1 0 BYTE BYTE 3 BYTE 4 1 BYTE 5 0 BYTE 6 1 BYTE 7 0 Note: Pattern recognition in “hex” is C5, 3A, A3, 5C, ...
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The data retention current value of the SRAMs can then be added to the IBAT value of the M41T315Y/V/W to determine the total current requirements for data retention. The available battery capacity for the SNAPHAT current to determine the ...
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Clock operation 3.1 Clock register information Clock information is contained in eight registers of 8 bits, each of which is sequentially accessed 1 bit at a time after the 64-bit pattern recognition sequence has been completed. When updating the ...
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Table 5. RTC register map Register 0.1 seconds seconds minutes 10/ 3 12/ OSC years Keys: A/P ...
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... Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode. Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets. 18/30 Parameter SNAPHAT , oscillator off) CC SOIC M41T315Y M41T315V/W Value Unit C –40 to +85 ° ® C –40 to +85 ° C –55 to +125 ° ...
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... Parameter V supply voltage CC Ambient operating temperature Load capacitance (C Input rise and fall times Input pulse voltages Input and output timing ref. voltages Figure 10. AC testing load circuit Note: 50pF for M41T315V. Table 8. Capacitance Symbol C Input capacitance IN (3) C Input/output capacitance IO 1. Effective capacitance measured with power supply at 5V; sampled only; not 100% tested. ...
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... V BAT 2.5 V – 0.2 CC1 or V – 0.2 BAT = 3.0V BAT 25° – 0.2V BAT . CCI 19. M41T315V/W –85 Max Min Typ Max ±1 ±1 ±1 ± 150 100 0.8 –0.3 0 0.3 2.0 CC1 0.3 0.4 0.4 2.4 2 ...
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... Input pulse rise and fall times equal 10ns Min Typ 32.768 12.5 tFB tF tPF DON’T CARE V BAT 0.2V V BAT (1)(2) Min 1.5 fall time 300 CC fall time 10 rise time M41T315Y M41T315V/W 19. Max Unit kHz 60 kΩ tREC 0.2V tPD AI04257 Max Unit 2.5 ms µs µs µs µ ...
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Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...
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Figure 12. SO16 - 16-lead plastic small outline, package outline SO-b Note: Drawing is not to scale Table 12. SO16 - 16-lead plastic small outline (150 mils body width), package mechanical data Sym Typ ...
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Figure 13. SOH28 - 28-lead plastic small outline, package outline Note: Drawing is not to scale. Table 13. SOH28 - 28-lead plastic small outline, package mechanical data Sym Typ 1. ...
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Figure 14 4-pin SNAPHAT housing for 48mAh battery and crystal, package mechanical data eA D Table 14 4-pin SNAPHAT housing for 48mAh battery and crystal, package mechanical data mm Sym Typ Min A A1 6.73 A2 ...
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Figure 15 4-pin SNAPHAT housing for 120mAh battery and crystal, package outline Table 15 4-pin SNAPHAT housing for 120mAh battery and crystal, package mechanical data Sym Typ ...
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Part numbering Table 16. Ordering information scheme Example: Device type M41T Supply voltage and write protect voltage (1) 315Y = V = 4.5 to 5.5V 4.25 to 4.50V CC PFD 315V = V = 3.0 to 3.6V; ...
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Caution: Do not place the SNAPHAT battery package “M4TXX-BR12SH” in conductive foam as it will drain the lithium button-cell battery. For other options, or for more information on any aspect of this device, please contact the ST sales office nearest ...
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Revision history Table 18. Document revision history Date Revision Jun-2001 17-Jul-2001 18-Sep-2001 27-Sep-2001 01-May-2002 04-Nov-2002 26-Mar-2003 08-Jun-2004 26-Nov-2007 1.0 First issue 1.1 Basic formatting changes 1.2 Changed pin 8 in 28-pin to V 1.3 Added ambient temp to DC ...
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