M48T128Y-70PM1 STMicroelectronics, M48T128Y-70PM1 Datasheet - Page 14

IC TIMEKPR NVRAM 1MBIT 5V 32-DIP

M48T128Y-70PM1

Manufacturer Part Number
M48T128Y-70PM1
Description
IC TIMEKPR NVRAM 1MBIT 5V 32-DIP
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheet

Specifications of M48T128Y-70PM1

Memory Size
1M (128K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
32-DIP (600 mil) Module
Function
Clock, Calendar, NV Timekeeping RAM, Battery Backup
Rtc Memory Size
1 MB
Supply Voltage (max)
4.5 V to 5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Rtc Bus Interface
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2834-5

Available stocks

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Manufacturer
Quantity
Price
Part Number:
M48T128Y-70PM1
Manufacturer:
ST
0
Clock operations
3.5
14/23
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 9.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
9) is recommended in order to provide the needed filtering.
Supply voltage protection
CC
to V
V CC
SS
Doc ID 5746 Rev 6
0.1µF
(cathode connected to V
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
DEVICE
CC
CC
, anode to V
bus. The energy stored in the
M48T128Y, M48T128V
SS
SS
by as much as
). Schottky diode
AI02169

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