MCP4332-103E/ST Microchip Technology, MCP4332-103E/ST Datasheet - Page 82
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MCP4332-103E/ST
Manufacturer Part Number
MCP4332-103E/ST
Description
IC DGTL POT QUAD 10K 14TSSOP
Manufacturer
Microchip Technology
Datasheet
1.MCP4332-103EST.pdf
(88 pages)
Specifications of MCP4332-103E/ST
Taps
129
Resistance (ohms)
10K
Number Of Circuits
4
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Volatile
Interface
SPI Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Resistance In Ohms
10K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MCP433X/435X
Using the simulation models of the NMOS and PMOS
devices for the MCP43XX analog switch
we plot the device resistance when the devices are
turned on.
resistances of the NMOS and PMOS devices as the
V
simply the parallel resistance on the NMOS and PMOS
devices (R
voltage for the NMOS ad PMOS devices, the
resistance becomes very large (Giga s). In the
transistors active region, the resistance is much lower.
For these graphs, the resistances are on different
scales.
NMOS and PMOS device resistance for their active
region and the resulting wiper resistance. For these
graphs, all resistances are on the same scale.
FIGURE B-10:
FIGURE B-11:
Transistor Resistance (R
Wiper Resistance (R
(V
DS22242A-page 82
IN
DD
voltage is increased. The wiper resistance (R
V
= 3.0V).
IN
3.00E+10
2.50E+10
2.00E+10
1.50E+10
1.00E+10
5.00E+09
0.00E+00
Figure B-13
W
Figure B-11
0.0
= R
“gate”
“gate”
R
PMOS
Theshold
PMOS
NMOS
0.3
and
R
Analog Switch.
NMOS and PMOS
W
W
|| R
NMOS
0.6
PMOS
) VS. V
V
and
IN
Figure B-14
PMOS
NMOS
Voltage
R
0.9
W
Figure B-12
R
). Below the threshold
NMOS
IN
1.2
, R
V
G
NMOS
Theshold
PMOS
(V
1.5
only plots the
DD
(Figure
V
/V
) and
OUT
1.8
show the
SS
2500
2000
1500
1000
500
0
)
B-10),
W
) is
FIGURE B-12:
Transistor Resistance (R
Wiper Resistance (R
(V
FIGURE B-13:
Transistor Resistance (R
Wiper Resistance (R
(V
FIGURE B-14:
Transistor Resistance (R
Wiper Resistance (R
(V
DD
DD
DD
= 1.8V).
= 3.0V).
= 1.8V).
7.00E+09
6.00E+09
5.00E+09
4.00E+09
3.00E+09
2.00E+09
1.00E+09
0.00E+00
300
250
200
150
100
5000
4500
4000
3500
3000
2500
2000
1500
1000
50
500
0
0
0.0
0.0
0.0
R
0.3
R
0.6
NMOS
PMOS
R
0.6
NMOS
0.6
NMOS and PMOS
NMOS and PMOS
NMOS and PMOS
W
W
W
2010 Microchip Technology Inc.
PMOS
Theshold
1.2
R
) VS. V
) VS. V
) VS. V
V
V
1.2
V
W
IN
IN
IN
NMOS
NMOS
NMOS
Voltage
Voltage
Voltage
0.9
NMOS
Theshold
R
1.8
1.8
W
IN
IN
IN
R
R
R
, R
, R
, R
W
PMOS
NMOS
1.2
R
PMOS
PMOS
PMOS
PMOS
2.4
2.4
1.5
) and
) and
) and
3.0
160
140
120
100
80
60
40
20
0
3.0
1.8