MCP4151-103E/MF Microchip Technology, MCP4151-103E/MF Datasheet - Page 8

• Manufacturer Part Number: MCP4151-103E/MF
• Description: IC POT DGTL SNGL 10K SPI 8DFN
• Manufacturer: Microchip Technology

Specifications of MCP4151-103E/MF

• Package / Case: 8-DFN
• Taps: 257
• Resistance (ohms): 10K
• Number Of Circuits: 1
• Temperature Coefficient: 150 ppm/°C Typical
• Memory Type: Volatile
• Interface: SPI Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Resistance In Ohms: 10K
• Number Of Pots: Single
• Taps Per Pot: 256
• Resistance: 10 KOhms
• Wiper Memory: Volatile
• Digital Interface: Serial (SPI)
• Operating Supply Voltage: 2.5 V, 3.3 V, 5 V
• Supply Current: 1 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
DS22060B-page 8
DC Characteristics
Rheostat
Differential
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
Capacitance (P
Capacitance (P
Capacitance (P
Note 1:
Parameters
2:
3:
4:
5:
6:
7:
8:
9:
10: Supply current is independent of current through the resistor network.
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP4XX1 only.
MCP4XX2 only, includes V
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
POR/BOR is not rate dependent.
A
w
B
)
)
)
R-DNL
Sym
C
C
C
AW
BW
W
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
-0.375
-0.375
-0.375
-0.375
-0.375
-0.375
WZSE
-0.75
-0.75
Min
-0.5
-1.0
-0.5
-1.0
-0.5
-0.5
-0.5
-0.5
—
—
—
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
W
and V
with V
±0.25
±0.25
±0.25
+0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
+0.5
+0.5
+0.5
Typ
120
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
Section 2.0
WFSE
75
75
A
= V
.
DD
+0.375
+0.375
+0.375
+0.375
+0.375
+0.375
W
+0.75
+0.75
Max
+0.5
+1.0
+0.5
+1.0
+0.5
+0.5
+0.5
+0.5
), which changes significantly over voltage and
—
—
—
and V
–40°C ≤ T
B
= V
Units
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
pF
pF
pF
SS
.
A
5 kΩ
10 kΩ
50 kΩ
100 kΩ 8-bit
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
≤ +125°C (extended)
DD
= 5.5V, T
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
7-bit
© 2008 Microchip Technology Inc.
Conditions
A
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
5.5V, I
3.0V (Note 7)
1.8V
= +25°C.
W
W
W
W
W
W
W
W
= 900 µA
= 900 µA
= 450 µA
= 450 µA
= 90 µA
= 90 µA
= 45 µA
= 45 µA