MCP4241T-103E/ML Microchip Technology, MCP4241T-103E/ML Datasheet - Page 50

• Manufacturer Part Number: MCP4241T-103E/ML
• Description: IC DGTL POT 10K 2CH 16QFN
• Manufacturer: Microchip Technology

Specifications of MCP4241T-103E/ML

• Package / Case: 16-QFN
• Taps: 129
• Resistance (ohms): 10K
• Number Of Circuits: 2
• Temperature Coefficient: 150 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Resistance In Ohms: 10K
• Number Of Pots: Dual
• Taps Per Pot: 128
• Resistance: 10 KOhms
• Wiper Memory: Non Volatile
• Digital Interface: Serial (4-Wire, SPI)
• Operating Supply Voltage: 2.5 V, 3.3 V, 5 V
• Supply Current: 550 uA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCP4241T-103-E/ML; MCP4241T-103-E/MLTR; MCP4241T-103-E/MLTR; MCP4241T-103E/MLTR

MCP414X/416X/424X/426X
7.5.3
Continuous writes are possible only when writing to the
volatile memory registers (address 00h, 01h, and 04h).
Figure 7-3
writes. The writes do not need to be to the same volatile
memory address.
FIGURE 7-3:
DS22059B-page 50
Note 1: If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
shows the sequence for three continuous
CONTINUOUS WRITES TO
VOLATILE MEMORY
driven low until the CS pin is driven inactive (V
SDI
SDO
Continuous Write Sequence (Volatile Memory only).
D
D
D
A
A
A
3
1
3
1
3
1
A
D
A
D
A
D
2
1
2
1
2
1
COMMAND BYTE
A
D
A
D
A
D
1
1
1
1
1
1
A
D
A
D
A
D
0
1
0
1
0
1
0
1
0
1
0
1
0
1 1* 1
0
1 1* 1
0
1 1* 1
D
D
D
9
9
9
D
D
D
8
8
8
D
D
D
7
1
7
1
7
1
IH
7.5.4
Continuous writes to non-volatile memory are not
allowed, and attempts to do so will result in a command
error (CMDERR) condition.
D
D
D
6
1
6
1
6
1
).
D
D
D
5
1
5
1
5
1
DATA BYTE
D
D
D
4
1
4
1
4
1
CONTINUOUS WRITES TO
NON-VOLATILE MEMORY
D
D
D
3
1
3
1
3
1
D
D
D
2
1
2
1
2
1
D
D
D
1
1
1
1
1
1
© 2008 Microchip Technology Inc.
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D
D
0
1
0
1
0
1