MCP4262-103E/MF Microchip Technology, MCP4262-103E/MF Datasheet - Page 32
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MCP4262-103E/MF
Manufacturer Part Number
MCP4262-103E/MF
Description
IC POT DGTL DUAL 10K RHEO 10DFN
Manufacturer
Microchip Technology
Specifications of MCP4262-103E/MF
Package / Case
10-DFN
Taps
257
Resistance (ohms)
10K
Number Of Circuits
2
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Non-Volatile
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Resistance In Ohms
10K
Number Of Pots
Dual
Taps Per Pot
256
Resistance
10 KOhms
Wiper Memory
Non Volatile
Digital Interface
Serial (4-Wire, SPI)
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Supply Current
550 uA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MCP414X/416X/424X/426X
REGISTER 4-1:
DS22059A-page 32
bit 0
Note 1:
Requires a High Voltage command to modify the state of this bit (for Non-Volatile devices only). This bit is
Not directly written, but reflects the system state (for this feature).
WP: EEPROM Write Protect Status bit (Refer to Section “EEPROM Write Protect” for further infor-
mation)
This bit indicates the status of the write protection on the EEPROM memory. When Write Protect is
enabled, writes to all non-volatile memory are prevented. This includes the General Purpose EEPROM
memory, and the non-volatile Wiper registers. Write Protect does not block modification of the volatile
wiper register values or the volatile TCON register value (via Increment, Decrement, or Write
commands).
This status bit is an OR of the devices Write Protect pin (WP) and the internal non-volatile WP bit. High
Voltage commands are required to enable and disable the internal WP EEPROM bit.
1 = EEPROM memory is Write Protected
0 = EEPROM memory can be written
STATUS REGISTER (CONTINUED)
© 2007 Microchip Technology Inc.