CAT5115LI-00-G ON Semiconductor, CAT5115LI-00-G Datasheet - Page 3

• Manufacturer Part Number: CAT5115LI-00-G
• Description: IC POT DIG 100K 32TAP 8DIP
• Manufacturer: ON Semiconductor

Specifications of CAT5115LI-00-G

• Taps: 32
• Resistance (ohms): 100K
• Number Of Circuits: 1
• Temperature Coefficient: 50 ppm/°C Typical
• Memory Type: Volatile
• Interface: Up/Down
• Voltage - Supply: 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Resistance In Ohms: 100K
• Number Of Pots: Single
• Taps Per Pot: 32
• Resistance: 100 KOhms
• Wiper Memory: Volatile
• Digital Interface: Serial (3-Wire)
• Operating Supply Voltage: 3.3 V or 5 V
• Supply Current: 0.1 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Supply Voltage (max): 6 V
• Supply Voltage (min): 2.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 5115LI-00-G

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
Table 2. OPERATION MODES
Table 3. ABSOLUTE MAXIMUM RATINGS
Table 4. RELIABILITY CHARACTERISTICS
Supply Voltage
Inputs
Operating Ambient Temperature
Junction Temperature
Storage Temperature
Lead Soldering (10 s max)
I
High to Low
High to Low
LTH
V
ZAP
V
CS to GND
INC to GND
U/D to GND
H to GND
L to GND
W to GND
Industrial (‘I’ suffix)
High
Low
INC
Symbol
CC
(Notes 1, 2)
X
N
T
(Note 1)
END
DR
to GND
Low to High
Low to High
ESD Susceptibility
Latch−Up
Data Retention
Endurance
High
Low
Low
CS
Parameter
Parameters
High
U/D
Low
X
X
X
Figure 4. Potentiometer Equivalent Circuit
C
C
H
L
MIL−STD−883, Test Method 3015
JEDEC Standard 17
MIL−STD−883, Test Method 1008
MIL−STD−883, Test Method 1003
No Store, Return to Standby
Store Wiper Position
http://onsemi.com
R
Wiper toward H
R
Wiper toward L
Test Method
H
L
Operation
Standby
3
R
WI
C
W
R
W
−0.5 to V
−0.5 to V
−0.5 to V
−0.5 to V
−0.5 to V
−0.5 to V
−40 to +85
−65 to 150
1,000,000
−0.5 to +7
Ratings
2000
+150
+300
Min
100
100
CC
CC
CC
CC
CC
CC
CC
+0.5
+0.5
+0.5
+0.5
+0.5
+0.5
+ 1 V.
Typ
Max
Units
°C
°C
°C
°C
V
V
V
V
V
V
V
Stores
Units
Years
mA
V