CAT5112VI-00-GT3 ON Semiconductor, CAT5112VI-00-GT3 Datasheet - Page 2

• Manufacturer Part Number: CAT5112VI-00-GT3
• Description: IC POT DGTL 100L 32TAP 8SOIC
• Manufacturer: ON Semiconductor

Specifications of CAT5112VI-00-GT3

• Taps: 32
• Resistance (ohms): 100K
• Number Of Circuits: 1
• Temperature Coefficient: 300 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: Up/Down
• Voltage - Supply: 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Resistance In Ohms: 100K
• Number Of Pots: Single
• Taps Per Pot: 32
• Resistance: 100 KOhms
• Wiper Memory: Non Volatile
• Digital Interface: Serial (3-Wire)
• Operating Supply Voltage: 3.3 V or 5 V
• Supply Current: 0.2 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 6 V
• Supply Voltage (min): 2.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

U/D
INC
CS
RL4A
CAT5112LT
YMXXXX
R = Resistance:
L = Assembly Location
4 = Lead Finish − NiPdAu
A = Product Revision (Fixed as “A”)
CAT5112L = Device Code (PDIP)
CAT5112V = Device Code (SOIC)
T = Temperature Range (Industrial)
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
XXXX = Last Four Digits of Assembly Lot Number
PDIP
Power On Recall
2 = 10 kW
4 = 50 kW
5 = 100 kW
Figure 1. Functional Diagram
Memory
Control
GND
V
and
CC
RL4A
CAT5112VT
YMXXXX
SOIC
+
–
DEVICE MARKING INFORMATION
http://onsemi.com
AAPN = CAT5112ZI−10−T3
AAPP = CAT5112ZI−50−T3
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
P = Product Revision
R
R
R
H
WB
L
2
MSOP
AAPN
YMP
Figure 2. Electronic Potentiometer Implementation
A2 = Device Code
R = Resistance:
L = Assembly Location
4 = Lead Finish − NiPdAu
Y = Production Year (Last Digit)
M = Production Month (1−9, A, B, C)
XXX = Last Three Digits of
XXX =
2 = 10 kW
4 = 50 kW
5 = 100 kW
+
–
Assembly Lot Number
TSSOP
A2RL
4YMXXX
R
R
R
H
WB
L