SST441NL-E3 Vishay, SST441NL-E3 Datasheet

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SST441NL-E3

Manufacturer Part Number
SST441NL-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of SST441NL-E3

Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
DESCRIPTION
The SST441NL is a monolithic high-speed dual JFET
mounted in a single SO-8 package. This JFET is an excellent
choice for use as wideband differential amplifiers in
demanding test and measurement applications.
Pins 4 and 8 on the SST441NL and pin 4 on the U441NL part
numbers enable the substrate to be connected to a positive,
external bias (V
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
For applications information see AN102.
Document Number: 72056
S-22526–Rev. A, 17-Feb-03
PRODUCT SUMMARY
FEATURES
D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 1 pA
D Low Noise
D High CMRR: 90 dB
V
GS(off)
-1 to -6
SUBSTRATE
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
S
D
1
1
1
1
V
DD
/
16
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
” from case for 10 sec.)
) to avoid latchup.
1
2
3
4
Narrow Body SOIC
SST441NL - 441NL
-25
Marking Codes:
Min (V)
. . . . . . . . . . . . . . . . . . . . . . . . . .
Top View
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Monolithic N-Channel JFET Duals
g
. . . . . . . . . . . . . . . . . . .
fs
BENEFITS
D External Substrate Bias—Avoids Latchup
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
D High-Speed Performance
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
8
7
6
5
Min (mS)
Accuracy
4.5
SUBSTRATE
G
D
S
2
2
2
-55 to 150_C
-55 to 150_C
I
G
50 mA
300_C
New Product
-25 V
Typ (pA) |V
-1
The U441NL in the hermetically sealed TO-78 package is
available with full military processing.
The SO-8 package provides ease of manufacturing. The
symmetrical pinout prevents improper orientation. The SO-8
package
compatibility with automatic assembly methods.
Power Dissipation :
Notes
a.
b.
GS1
Derate 2.4 mW/_C above 25_C
Derate 4 mW/_C above 25_C
- V
D
1
GS2
G
20
S
is available with tape-and-reel options for
1
1
2
|Max (mV)
1
3
Top View
U441NL
TO-78
4
CASE, SUBSTRATE
Per Side
Total
APPLICATIONS
D Wideband Differential Amps
D High-Speed,
D High Speed Comparators
D Impedance Converters
SST441NL/U441NL
7
5
b
Temp-Compensated,
Single-Ended Input Amps
6
. . . . . . . . . . . . . . . . . . . . . . . . . . .
a
G
S
. . . . . . . . . . . . . . . . . . . . . . . .
2
2
D
Vishay Siliconix
2
www.vishay.com
300 mW
500 mW
7-1

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SST441NL-E3 Summary of contents

Page 1

... SO-8 package. This JFET is an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. Pins 4 and 8 on the SST441NL and pin 4 on the U441NL part numbers enable the substrate to be connected to a positive, external bias ( avoid latchup ...

Page 2

... SST441NL/U441NL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Symbol Static Gate-Source Breakdown Voltage V (BR)GSS Gate-Source Cutoff Voltage V b Saturation Drain Current Gate Reverse Current Gate Reverse Current Gate Operating Current Gate Operating Current Gate-Source Forward Voltage V Dynamic Common-Source Forward Transconductance ...

Page 3

... UNLESS OTHERWISE NOTED -100 nA - -100 -0 -1 -0 -0 -1 0.8 1 SST441NL/U441NL Vishay Siliconix Gate Leakage Current 100 125_C GSS 125_C 100 25_C 25_C GSS Drain-Gate Voltage (V) DG Output Characteristics GS(off -0.4 V -0.8 V -1.2 V -1 ...

Page 4

... SST441NL/U441NL Vishay Siliconix TYPICAL CHARACTERISTICS (T Transfer Characteristics GS(off -55_C A 12 25_C 8 125_C -0.5 -1.0 -1 Gate-Source Voltage (V) GS Voltage Differential with Temperature vs. Drain Current 100 125_C -55 to 25_C 0 Drain Current (mA) D Circuit Voltage Gain vs. Drain Current 100 Assume GS(off 0 Drain Current (mA) D www ...

Page 5

... UNLESS OTHERWISE NOTED -16 - kHz -55_C 8 4 125_C 250 kHz 200 150 100 125_C SST441NL/U441NL Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz -12 - Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency 100 Frequency (Hz) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage r g ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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