J108-E3 Vishay, J108-E3 Datasheet - Page 4

• Manufacturer Part Number: J108-E3
• Manufacturer: Vishay

Specifications of J108-E3

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): 25V
• Drain-gate Voltage (max): -25V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / Rohs Status: Compliant

J/SST108 Series
Vishay Siliconix
www.vishay.com
7-4
100 nA
100 pA
10 nA
10 pA
1 nA
1 pA
100
200
160
120
Forward Transconductance and Output Conductance
80
60
40
20
80
40
0
0
0
0
0
g
V
V
f = 1 MHz
fs
GS
Capacitance vs. Gate-Source Voltage
T
DS
T
and g
A
A
= 0 V, f = 1 kHz
V
= 0 V
= 125_C
I
= 25_C
vs. Gate-Source Cutoff Voltage
GSS
GS(off)
–2
–4
4
C
os
iss
V
@ 125_C
5 mA
V
GS
Gate Leakage Current
C
@ V
– Gate-Source Cutoff Voltage (V)
DG
rss
– Gate-Source Voltage (V)
10 mA
g
– Drain-Gate Voltage (V)
DS
fs
–4
–8
8
= 5 V
1 mA
I
D
=10 mA
–12
12
–6
g
os
1 mA
I
GSS
@ 25_C
16
–16
–8
5 mA
–20
–10
_
20
50
40
30
20
10
0
100
100
100
0.1
10
10
10
1
1
1
10
1
10
V
V
DS
GS(off)
Transconductance vs. Drain Current
g
= 5 V
T
ig
40 mA
Common Gate Input Admittance
A
= –55_C
Noise Voltage vs. Frequency
= –4 V
I
100
D
= 10 mA
20
I
D
f – Frequency (MHz)
– Drain Current (mA)
f – Frequency (Hz)
b
ig
125_C
10
1 k
S-04028—Rev. E, 04-Jun-01
Document Number: 70231
50
V
f = 1 kHz
T
V
I
D
25_C
A
DS
DG
10 k
= 20 mA
= 25_C
= 5 V
= 20 V
100
100 k
100