RD1950MPXM2010GS Freescale Semiconductor, RD1950MPXM2010GS Datasheet - Page 37

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RD1950MPXM2010GS

Manufacturer Part Number
RD1950MPXM2010GS
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of RD1950MPXM2010GS

Lead Free Status / Rohs Status
Compliant
Freescale Semiconductor
NOTES:
Algorithm for Programming
a Row (32 Bytes) of FLASH Memory
The time between each FLASH address change (step 7 to step 7),
or the time between the last FLASH address programmed
to clearing PGM bit (step 7 to step 10)
must not exceed the maximum programming
time, t
This row program algorithm assumes the row/s
to be programmed are initially erased.
PROG
max.
Figure 2-4. FLASH Programming Flowchart
MC68HC908QY/QT Family Data Sheet, Rev. 6
2
1
3
4
5
6
7
8
READ THE FLASH BLOCK PROTECT REGISTER
WITHIN THE ROW ADDRESS RANGE DESIRED
WRITE ANY DATA TO ANY FLASH ADDRESS
9
WRITE DATA TO THE FLASH ADDRESS
WAIT FOR A TIME, t
TO BE PROGRAMMED
WAIT FOR A TIME, t
WAIT FOR A TIME, t
PROGRAMMING
SET HVEN BIT
SET PGM BIT
COMPLETED
THIS ROW?
N
PROG
10
11
12
13
NVS
PGS
Y
END OF PROGRAMMING
WAIT FOR A TIME, t
WAIT FOR A TIME, t
CLEAR HVEN BIT
CLEAR PGM BIT
FLASH Memory (FLASH)
NVH
RCV
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