UBCV49EG Diodes Zetex, UBCV49EG Datasheet
![](/photos/31/36/313648/406-sot-223_sml.jpg)
UBCV49EG
Manufacturer Part Number
UBCV49EG
Description
Manufacturer
Diodes Zetex
Datasheet
1.UBCV49EG.pdf
(1 pages)
Specifications of UBCV49EG
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
1.5@0.1mA@100mAV
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Dc Current Gain
2000@500mA
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-89
Lead Free Status / Rohs Status
Supplier Unconfirmed
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTARY TYPE –
PARTMARKING DETAILS –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
For typical graphs see FMMT38A datasheet
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature
Range
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
amb
SYMBOL
V
V
V
I
V
V
h
f
C
CBO
EBO
T
=25°C
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
obo
BCV48
EG
MIN.
80
60
10
2000
4000
10000
2000
† Periodic Sample Test Only.
3 - 26
amb
SYMBOL
V
V
V
I
I
P
T
TYP.
170
3.5
CM
C
tot
j
CBO
CEO
EBO
:T
stg
= 25°C unless otherwise stated).
MAX.
100
10
100
1
1.5
UNIT
V
V
V
nA
nA
V
V
MHz
pF
A
-65 to +150
VALUE
800
500
80
60
10
1
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
f = 20MHz
V
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
=10 A
=100 A
=10mA*
=100mA, I
=100mA, I
=100 A, V
=10mA, V
=100mA, V
=500mA, V
=50mA, V
=4V
=60V
=60V, T
=10V, f=1MHz
BCV49
C
SOT89
B
amb
CE
CE
B
B
CE
CE
CE
=0.1mA*
=0.1mA*
=5V*
=5V
=1V†
=150°C
UNIT
=5V*
=5V*
C
mA
mA
W
°C
V
V
V
E