SST3958NL-E3 Vishay, SST3958NL-E3 Datasheet - Page 2

• Manufacturer Part Number: SST3958NL-E3
• Manufacturer: Vishay

Specifications of SST3958NL-E3

• Channel Type: N
• Configuration: Dual
• Gate-source Voltage (max): -50V
• Drain-gate Voltage (max): -50V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Compliant

SST3958NL/U3958NL
Vishay Siliconix
Notes
a.
b.
www.vishay.com
7-2
SPECIFICATIONS (T
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Reverse Current
Gate Operating Current
Gate Operating Current
Gate Source Voltage
Gate-Source Voltage
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Drain-Gate Capacitance
Equivalent Input Noise Voltage
Noise Figure
Matching
Differential Gate-Source Voltage
Gate-Source Voltage Differential Change with
Temperature
Saturation Drain Current Ratio
Transconductance Ratio
Differential Output Conductance
Differential Gate Current
Common Mode Rejection Ratio
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
Parameter
b
A
= 25_C UNLESS OTHERWISE NOTED)
D | V
| V
| g
| I
GS1
GS1
Symbol
os1
G1
V
V
I
I
CMRR
V
DT
(BR)GSS
DSS2
DSS1
g
g
–I
GS(off)
I
I
I
–V
V
V
C
C
C
GSS
GSS
GS(F)
–V
–g
DSS
g
NF
g
e
fs1
fs2
I
I
GS
GS
G
G
os
iss
rss
G2
dg
fs
n
GS2
os2
GS2
|
|
|
|
New Product
V
V
V
DS
DG
DG
V
V
V
V
V
V
V
V
f = 100 Hz, R
= 20 V, V
V
V
V
V
V
V
DG
Test Conditions
I
DG
V
DS
DS
DG
DG
I
DG
G
GS
G
= 10 V, I
= 10 to 20 V, I
DS
DS
DS
DS
DS
DS
DS
T
= -1 mA, V
A
= 1 mA, V
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= -30 V, V
= 20 V, V
= 20 V, V
= 20 V V
= 20 V, V
= 20 V, V
= 20 V, V
= 20 V, I
= -55 to 125_C
T
f = 1 MHz
A
f = 1 kHz
f = 1 kHz
f = 1 kHz
= 125_C
GS
S
= 0 , f = 1 MHz
D
D
D
= 0 V, f = 1 kHz
D
D
D
D
G
D
DS
DS
= 200 mA
GS
GS
GS
GS
GS
GS
= 200 mA
= 200 mA
= 200 mA
= 200 mA
= 200 mA
= 200 mA
DS
= 10 MW
D
= 1 nA
T
T
I
= 0 V
= 0 V
= 0 V
A
D
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 200 mA
A
= 0 V
= 150_C
= 50 mA
=125_C
Min
0.85
0.85
-1.0
-0.5
-50
0.5
1
Limits
Typ
0.97
0.97
-0.8
-2.5
100
-57
-10
-20
3.0
0.5
0.1
0.1
11
15
20
-3
-5
5
8
3
1
S-22527—Rev. A, 17-Feb-03
a
Document Number: 72157
Max
-100
-500
-250
-4.5
-4.2
100
-50
3.6
1.2
1.5
35
25
10
-4
8
2
4
1
1
mV/_C
Unit
√Hz
mA
mS
mV
nV⁄
pA
nA
pA
nA
mS
pF
dB
mS
nA
dB
V
V
V
NQP