IRSF3010STR International Rectifier, IRSF3010STR Datasheet
IRSF3010STR
Specifications of IRSF3010STR
Related parts for IRSF3010STR
IRSF3010STR Summary of contents
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... FULLY PROTECTED POWER MOSFET SWITCH General Description: The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short cir- cuit, over-temperature, ESD and over-voltage pro- tections. The on chip protection circuit latches off the POWER MOSFET in case the drain current ex- ceeds 14A (typical) or the junction temperature ex- ceeds 165° ...
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Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur 25°C unless otherwise specified.) Symbol V ds, max Continuous Drain to Source Voltage V in, max Continuous Input Voltage I ...
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... Switching Electrical Characteristics 14V, Resistive Load °C.) Please refer to Figure 15 for switching time definitions. Symbol Parameter Definition t don Turn-On Delay time t r Rise Time t doff Turn-Off Delay time t f Fall Time Protection Characteristics °C unless otherwise specified.) Symbol Parameter Definition I ds(sd) ...
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T = 25°C 110 100 Vin = Vin = 5V 70 Vin = Ids (A) Fig Resistance vs Drain to Source Current 17 T ...
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Rise Time 1.00 On Delay 0.50 0. Input Voltage (Volts characteristics vs Input Voltag e 0 25°C 0.8 Off Delay 0.7 0.6 ...
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... 90% 10 don r Fig Definition of Switching times > t < t reset ds(sd Fig Definition of t reset doff f Fig Definition of I peak , t Iblank , t Iresp reset Vcc = 14V = 0 Vcc = 14V peak t I blank Short applied before turn- resp Vcc = 14V R L Fig Definition of t Tresp ...
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... The over-current and over-temperature protection makes the IRSF3010 indestructible at any load condi- tions in switching or in linear applications. The built-in ESD protection minimizes the risk of ESD damage when the device is off-circuit. The IRSF3010 is fully characterized for avalanche operation and can be used for fast de-energization of inductive loads ...
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... The typical waveforms at 7V input voltage are shown in figure 22. In typical switching applications, below 40kHz, the difference in switching losses between the IRSF3010 and the same size standard MOSFET is negligible. Input voltage 5V/ Drain voltage 5V/ Drain Current: 1A/ Time: 1 sV/div. Fig. 22 Switching waveforms with 7V Input ...