EVALADF7012EB2 Analog Devices Inc, EVALADF7012EB2 Datasheet - Page 6

• Manufacturer Part Number: EVALADF7012EB2
• Manufacturer: Analog Devices Inc

Specifications of EVALADF7012EB2

• Lead Free Status / Rohs Status: Not Compliant

ADF7012
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
DV
(GND = AGND = DGND = 0 V)
Digital I/O Voltage to GND
Analog I/O Voltage to GND
Operating Temperature Range
TSSOP θ
Lead Temperature, Soldering
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
A
Maximum Junction Temperature
Vapor Phase (60 sec)
Infrared (15 sec)
DD
= 25°C, unless otherwise noted.
to GND
JA
Thermal Impedance
Rating
−0.3 V to +3.9 V
−0.3 V to DV
−0.3 V to DV
150°C
150.4°C/W
215°C
220°C
DD
DD
+ 0.3 V
+ 0.3 V
Rev. 0 | Page 6 of 28
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of 1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
35819 (CMOS)