R1LV0416DSB-5SI#S0 Renesas Electronics America, R1LV0416DSB-5SI#S0 Datasheet - Page 11

• Manufacturer Part Number: R1LV0416DSB-5SI#S0
• Manufacturer: Renesas Electronics America

R1LV0416D Series
Write Cycle
Write cycle time
Address valid to end of write
Chip selection to end of write
Write pulse width
LB#, UB# valid to end of write
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Output active from end of write
Output disable to output in high-Z
Write to output in high-Z
Notes: 1. t
Rev.1.00, May.24.2007, page 9 of 15
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write
5. t
6. t
7. t
referred to output voltage levels.
device to device.
begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB#
going low. A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and
LB# going high or UB# going high. t
CHZ
CW
AS
WR
is measured from the address valid to the beginning of write.
, t
is measured from the later of CS1# going low or CS2 going high to the end of write.
is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
OHZ
Parameter
, t
WHZ
and t
BHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
WP
Symbol
is measured from the beginning of write to the end of write.
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
OHZ
WC
AW
CW
WP
BW
WR
DW
OW
AS
DH
HZ
Min
max is less than t
55
50
50
40
50
25
0
0
0
5
0
0
-5SI
Max
20
20










R1LV0416D
LZ
min both for a given device and from
Min
70
60
60
50
55
30
0
0
0
5
0
0
-7LI
Max
25
25










Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1, 2, 3
1, 2
5
4
6
7
2