SI5326C-C-GMR Silicon Laboratories Inc, SI5326C-C-GMR Datasheet - Page 8

• Manufacturer Part Number: SI5326C-C-GMR
• Manufacturer: Silicon Laboratories Inc

Si5326
8
Table 2. DC Characteristics (Continued)
(V
3-Level Input Pins
Input Voltage Low
Input Voltage Mid
Input Voltage High
Input Low Current
Input Mid Current
Input High Current
LVCMOS Output Pins
Output Voltage Low
Output Voltage Low
Output Voltage High
Output Voltage High
Disabled Leakage
Current
Notes:
DD
1.
2. No under- or overshoot is allowed.
3. LVPECL outputs require nominal V
4. This is the amount of leakage that the 3-Level inputs can tolerate from an external driver. See Si53xx
5. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 622.08 MHz.
= 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, T
Parameter
Current draw is independent of supply voltage
Family Reference Manual for more details.
4
Symbol
V
V
I
V
V
V
I
I
I
IMM
IHH
IMM
ILL
OZ
IHH
ILL
OH
OL
A
= –40 to 85 °C)
DD
Test Condition
≥ 2.5 V.
V
V
V
V
IO = –2 mA
See Note 4
See Note 4
See Note 4
IO = –2 mA
IO = 2 mA
DD
IO = 2 mA
DD
DD
DD
RSTb = 0
= 1.71 V
= 2.97 V
= 1.71 V
= 2.97 V
Rev. 1.0
0.45 x
0.85 x
V
V
–100
V
V
Min
–20
DD
0.4
DD
0.4
–2
—
—
—
—
DD
DD
–
–
Typ
—
—
—
—
—
—
—
—
—
—
—
0.15 x V
0.55 x V
Max
100
0.4
0.4
+2
20
—
—
—
—
DD
DD
Unit
µA
µA
µA
µA
V
V
V
V
V
V
V