EP3C10F256C8N Altera, EP3C10F256C8N Datasheet - Page 156
EP3C10F256C8N
Manufacturer Part Number
EP3C10F256C8N
Description
IC CYCLONE III FPGA 10K 256-FBGA
Manufacturer
Altera
Series
Cyclone® IIIr
Datasheets
1.EP3C5F256C8N.pdf
(5 pages)
2.EP3C5F256C8N.pdf
(34 pages)
3.EP3C5F256C8N.pdf
(66 pages)
4.EP3C5F256C8N.pdf
(14 pages)
5.EP3C5F256C8N.pdf
(76 pages)
6.EP3C10M164C8N.pdf
(350 pages)
7.EP3C10F256C8N.pdf
(274 pages)
Specifications of EP3C10F256C8N
Number Of Logic Elements/cells
10320
Number Of Labs/clbs
645
Total Ram Bits
423936
Number Of I /o
182
Voltage - Supply
1.15 V ~ 1.25 V
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C
Package / Case
256-FBGA
Family Name
Cyclone III
Number Of Logic Blocks/elements
10320
# I/os (max)
182
Frequency (max)
402MHz
Process Technology
65nm
Operating Supply Voltage (typ)
1.2V
Logic Cells
10320
Ram Bits
423936
Operating Supply Voltage (min)
1.15V
Operating Supply Voltage (max)
1.25V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
256
Package Type
FBGA
No. Of Logic Blocks
645
Family Type
Cyclone III
No. Of I/o's
182
I/o Supply Voltage
3.3V
Operating Frequency Max
402MHz
Operating Temperature Range
0°C To +85°C
Rohs Compliant
Yes
For Use With
544-2601 - KIT DEV CYCLONE III LS EP3CLS200544-2411 - KIT DEV NIOS II CYCLONE III ED.
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Number Of Gates
-
Lead Free Status / Rohs Status
Compliant
Other names
544-2417
EP3C10F256C8N
EP3C10F256C8N
Available stocks
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- EP3C5F256C8N PDF datasheet
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- EP3C5F256C8N PDF datasheet #4
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8–12
DDR Output Registers
Figure 8–5. Cyclone III Device Family Dedicated Write DDIO
Cyclone III Device Handbook, Volume 1
f
-90° Shifted Clock
A dedicated write DDIO block is implemented in the DDR output and output enable
paths.
Figure 8–5
implemented in the I/O element (IOE) registers.
The two DDR output registers are located in the I/O element (IOE) block. Two serial
data streams routed through datain_l and datain_h, are fed into two registers,
output register Ao and output register Bo, respectively, on the same clock
edge. The output from output register Ao is captured on the falling edge of the
clock, while the output from output register Bo is captured on the rising edge of
the clock. The registered outputs are multiplexed by the common clock to drive the
DDR output pin at twice the data rate.
The DDR output enable path has a similar structure to the DDR output path in the
IOE block. The second output enable register provides the write preamble for the DQS
strobe in DDR external memory interfaces. This active-low output enable register
extends the high-impedance state of the pin by half a clock cycle to provide the
external memory’s DQS write preamble time specification.
For more information about Cyclone III device family IOE registers, refer to the
Cyclone III Device I/O Features
Output Enable
datain_h
datain_l
shows how Cyclone III device family dedicated write DDIO block is
Output Register A
Output Register B
Output Enable
Register A
Output Enable
Register B
Register
Register
Register
Register
chapter.
IOE
IOE
IOE
IOE
DDR Output Enable Registers
DDR Output Registers
Chapter 8: External Memory Interfaces in the Cyclone III Device Family
OE
OE
O
O
data0
data1
data1
data0
®
Cyclone III Device Family Memory Interfaces Features
© January 2010 Altera Corporation
DQ or DQS
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