MPC8541EPXAQF Freescale Semiconductor, MPC8541EPXAQF Datasheet - Page 78

IC MPU POWERQUICC III 783-FCPBGA

MPC8541EPXAQF

Manufacturer Part Number
MPC8541EPXAQF
Description
IC MPU POWERQUICC III 783-FCPBGA
Manufacturer
Freescale Semiconductor
Series
PowerQUICC IIIr
Datasheets

Specifications of MPC8541EPXAQF

Processor Type
MPC85xx PowerQUICC III 32-Bit
Speed
1.0GHz
Voltage
1.3V
Mounting Type
Surface Mount
Package / Case
783-FCPBGA
Core Size
32 Bit
Program Memory Size
64KB
Cpu Speed
1GHz
Embedded Interface Type
I2C, SPI, UART
Digital Ic Case Style
BGA
No. Of Pins
783
Rohs Compliant
No
For Use With
MPC8548CDS - DEV TOOLS CDS FOR 8548CWH-PPC-8540N-VE - KIT EVAL SYSTEM MPC8540
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Features
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPC8541EPXAQF
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
System Design Information
When data is held high, SW1 is closed (SW2 is open) and R
OV
other in value. Then, Z
The value of this resistance and the strength of the driver’s current source can be found by making two
measurements. First, the output voltage is measured while driving logic 1 without an external differential
termination resistor. The measured voltage is V
while driving logic 1 with an external precision differential termination resistor of value R
measured voltage is V
× (V
Table 50
nominal OV
78
Impedance
Note: Nominal supply voltages. See
Differential
DD
R
R
1
N
P
/V
/2. R
MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2
2
summarizes the signal impedance targets. The driver impedance are targeted at minimum V
– 1). The drive current is then I
P
DD
then becomes the resistance of the pull-up devices. R
Local Bus, Ethernet, DUART, Control, Configuration, Power
, 105°C.
2
0
= 1/(1/R
= (R
P
+ R
Table
Figure 50. Driver Impedance Measurement
1
Data
+ 1/R
N
Table 50. Impedance Characteristics
Management
)/2.
1, T
43 Target
43 Target
2
j
NA
)) × I
= 105°C.
source
source
1
= V
= R
. Solving for the output impedance gives R
1
source
/R
source
× I
Pad
P
.
R
source
R
is trimmed until the voltage at the pad equals
OV
OGND
N
P
DD
P
. Second, the output voltage is measured
and R
SW2
SW1
N
25 Target
25 Target
are designed to be close to each
PCI
NA
DDR DRAM Symbol Unit
20 Target
20 Target
Freescale Semiconductor
NA
term
source
Z
. The
DIFF
Z
Z
0
0
= R
DD
term
Ω
Ω
Ω
,

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