MAX660ESA Maxim Integrated Products, MAX660ESA Datasheet - Page 2

• Manufacturer Part Number: MAX660ESA
• Description: Charge Pumps CMOS Monolithic Voltage Converter
• Manufacturer: Maxim Integrated Products

Specifications of MAX660ESA

• Function: Inverting, Step Up
• Output Voltage: - 1.5 V to - 5.5 V, 3 V to 11 V
• Output Current: 100 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT

Supply Voltage (V+ to GND, or GND to OUT) .......................+6V
LV Input Voltage ...............................(OUT - 0.3V) to (V+ + 0.3V)
FC and OSC Input Voltages........................The least negative of
OUT and V+ Continuous Output Current..........................120mA
Output Short-Circuit Duration to GND (Note 1) ....................1sec
Continuous Power Dissipation (T
ELECTRICAL CHARACTERISTICS
(V+ = 5V, C1 = C2 = 150µF, test circuit of Figure 1, FC = open, T
CMOS Monolithic Voltage Converter
ABSOLUTE MAXIMUM RATINGS
Note 1: OUT may be shorted to GND for 1sec without damage, but shorting OUT to V+ may damage the device and should be
Stresses beyond those listed under “Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: In the test circuit, capacitors C1 and C2 are 150µF, 0.2Ω maximum ESR, aluminum electrolytics.
Note 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. See Capacitor Selection section.
Note 4: The ESR of C1 = C2 ≤ 0.5Ω. Guaranteed by correlation, not production tested.
2
Output Resistance (Note 3)
Operating Supply Voltage
Supply Current
Output Current
Oscillator Frequency
OSC Input Current
Power Efficiency
Voltage-Conversion
Efficiency
Plastic DIP (derate 9.09mW/°C above + 70°C) ............727mW
SO (derate 5.88mW/°C above +70°C) ..........................471mW
CERDIP (derate 8.00mW/°C above +70°C) ..................640mW
_______________________________________________________________________________________
PARAMETER
avoided. Also, for temperatures above +85°C, OUT must not be shorted to GND or V+, even instantaneously, or device
damage may result.
Capacitors with higher ESR may reduce output voltage and efficiency. See Capacitor Selection section.
(OUT - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
A
R
No load
T
T
I
FC = open
FC = V+
FC = open
FC = V+
R
R
I
No load
L
L
= +70°C)
A
A
L
L
L
= 100mA
= 100mA to GND
≤ +85°C, OUT more negative than -4V
> +85°C, OUT more negative than -3.8V
= 1kΩ
= 1kΩ connected between V+ and OUT
= 500Ω connected between OUT and GND
Inverter, LV = open
Inverter, LV = GND
Doubler, LV = OUT
FC = open, LV = open
FC = V+, LV = open
T
T
T
A
A
A
≤ +85°C, C1 = C2 = 10µF, FC = V+ (Note 4)
≤ +85°C, C1 = C2 = 150µF
≤ +85°C
CONDITIONS
A
= T
Operating Temperature Ranges
Storage Temperature Range............................... -65°to +160°C
Lead Temperature (soldering, 10sec) ........................... +300°C
MIN
MAX660C_ _ ........................................................0°C to +70°C
MAX660E_ _ .....................................................-40°C to +85°C
MAX660MJA ...................................................-55°C to +125°C
to T
MAX
, unless otherwise noted.) (Note 2)
99.00
MIN
100
100
3.0
1.5
2.5
40
96
92
5
99.96
TYP
0.12
6.5
10
80
±1
±8
98
96
88
1
MAX
10.0
5.5
5.5
5.5
0.5
15
12
3
UNITS
kHz
mA
mA
µA
%
%
Ω
V