BYV26E-TR Vishay / Small Signal & Opto Products (SSP), BYV26E-TR Datasheet - Page 3
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BYV26E-TR
Manufacturer Part Number
BYV26E-TR
Description
Diode, Ultrafast; 2.5 V (Max.); 1 A IF; 1000V; 30A Ifms; 5 uA (Max.) IR; SOD-57
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet
1.BYV26E-TR.pdf
(3 pages)
Specifications of BYV26E-TR
Current, Forward
1 A
Current, Reverse
100 μA
Current, Surge
30 A
Package Type
SOD-57
Primary Type
Avalanche
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-55 to +175 °C
Time, Recovery
75 ns
Voltage, Forward
2.5 V
Voltage, Reverse
1000 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BYV26E-TR
Manufacturer:
Vishay Semiconductors
Quantity:
20 130
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Package Dimensions in mm (Inches)
95 9730
95 9731
0.001
0.01
Figure 4. Max. Forward Current vs. Forward Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
Sintered Glass Case
SOD-57
0
1
0
0
T
j
=175°C
R
T
amb
1
thJA
40
- Ambient Temperature ( °C )
V
26(1.014) min.
= 100 K/W
F
2
T
- Forward Voltage ( V )
j
= 25°C
80
3
R
thJA
5
120
= 45 K/W
Cathode Identification
6
160
6
200
7
4.0 (0.156) max.
3.6 (0.140)max.
16380
16381
40
35
30
25
20
15
10
40
35
30
25
20
15
10
26(1.014) min.
Figure 5. Diode Capacitance vs. Reverse Voltage
Figure 6. Diode Capacitance vs. Reverse Voltage
5
0
5
0
0.1
0.1
ISO Method E
V - Reverse Voltage ( V )
V - Reverse Voltage ( V )
R
R
1
1
0.82 (0.032) max.
Vishay Semiconductors
BYV26C
BYV26E
94 9538
10
10
f = 1 MHz
f = 1 MHz
100
100
BYV26
3