BYV26C-TR Vishay / Small Signal & Opto Products (SSP), BYV26C-TR Datasheet - Page 2
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BYV26C-TR
Manufacturer Part Number
BYV26C-TR
Description
Diode, Ultrafast; 2.5 V (Max.); 1 A IF; 600V; 30A Ifms; 5 uA (Max.) IR; SOD-57
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet
1.BYV26E-TR.pdf
(3 pages)
Specifications of BYV26C-TR
Current, Forward
1 A
Current, Reverse
100 μA
Current, Surge
30 A
Package Type
SOD-57
Primary Type
Avalanche
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-55 to +175 °C
Time, Recovery
30 ns
Voltage, Forward
2.5 V
Voltage, Reverse
600 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BYV26C-TR
Manufacturer:
Vishay Semiconductors
Quantity:
14 391
BYV26
Vishay Semiconductors
Maximum Thermal Resistance
T
Electrical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
2
Junction ambient
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
amb
amb
95 9728
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Max. Reverse Power Dissipation vs. Junction
600
500
400
300
200
100
0
0
Parameter
Parameter
R
thJA
T
j
40
– Junction Temperature (° C )
= 45 K/W
R
thJA
= 100 K/W
80
Temperature
120
l = 10 mm, T
I
I
V
V
I
I
F
F
R
F
R
R
V
= 1 A
= 1 A, T
= 0.5 A, I
= 100 µA
= V
= V
R
160
= V
RRM
RRM
1000V
200V
400V
600V
800V
RRM
Test condition
Test condition
j
, T
= 175 °C
R
200
L
= 1 A, i
j
= constant
= 150 °C
R
= 0.25 A
BYV26A-
BYV26D-
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26C
BYV26E
Part
95 9729
Figure 2. Max. Reverse Current vs. Junction Temperature
Symbol
1000
R
100
thJA
10
1
Symbol
0
V
V
V
V
V
(BR)R
(BR)R
(BR)R
(BR)R
(BR)R
V
V
I
I
t
t
R
R
rr
rr
F
F
V
R
T
40
= V
j
– Junction Temperature ( °C )
RRM
1100
Min
300
500
700
900
80
Value
45
120
Typ.
160
200
Max
100
2.5
1.3
30
75
5
K/W
Unit
Unit
µA
µA
ns
ns
V
V
V
V
V
V
V