IRF840APBF Vishay PCS, IRF840APBF Datasheet - Page 2
IRF840APBF
Manufacturer Part Number
IRF840APBF
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.85Ohm; ID 8A; TO-220AB; PD 125W; VGS +/-30V
Manufacturer
Vishay PCS
Datasheet
1.IRF840APBF.pdf
(3 pages)
Specifications of IRF840APBF
Current, Drain
8 A
Gate Charge, Total
38 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
0.85 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
3.7 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
2 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840APBF
Manufacturer:
INFINEON
Quantity:
21 000
Company:
Part Number:
IRF840APBF
Manufacturer:
VISHAY
Quantity:
4 250
Part Number:
IRF840APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Avalanche Characteristics
Thermal Resistance
Diode Characteristics
Dynamic @ T
Static @ T
E
I
E
R
R
R
R
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
V
∆V
V
I
I
AR
S
on
DSS
GSS
d(on)
d(off)
f
SM
r
rr
AS
AR
fs
θJC
θCS
θJA
DS(on)
SD
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
Parameter
Parameter
Parameter
–––
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
3.7
2.0
–––
–––
–––
–––
––– 2.16 3.24
Intrinsic turn-on time is negligible (turn-on is dominated by L
1018 –––
1490 –––
0.58
–––
–––
–––
–––
–––
–––
–––
155
–––
–––
–––
422
––– 0.85
–––
–––
––– -100
8.0
11
23
26
19
42
56
–––
633
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
2.0
4.0
9.0
8.0
38
18
25
32
–––
µC
nC
ns
pF
µA
nA
ns
V/°C
Ω
S
V
V
V
Typ.
Typ.
0.50
–––
–––
–––
–––
ƒ = 1.0MHz, See Fig. 5
V
V
I
V
V
V
I
R
R
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
D
D
J
J
GS
Reference to 25°C, I
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 8.0A
= 8.0A
= 25°C, I
= 25°C, I
= 9.1Ω
= 31Ω,See Fig. 10
= 50V, I
= 400V
= 0V
= 25V
= 0V, I
= 10V, I
= V
= 500V, V
= 400V, V
= 30V
= -30V
= 10V, See Fig. 6 and 13
= 250V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
= 250µA
Conditions
= 8.0A, V
= 8.0A
Conditions
Conditions
= 250µA
= 4.8A
= 4.8A
GS
GS
= 0V to 400V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
510
–––
8.0
1.0
13
62
= 0V
= 0V, T
D
GS
= 1mA
J
G
= 0V
= 125°C
Units
Units
°C/W
S
mJ
mJ
+L
A
D
S
D
)
2