EE-SPX303N Omron Automation, EE-SPX303N Datasheet - Page 2

• Manufacturer Part Number: EE-SPX303N
• Description: Sensor; Indicator; Photomicro; 13 mm; Infrared Light; Dark ON; Modulated Light
• Manufacturer: Omron Automation
• Type: Slot Photoelectricr

Specifications of EE-SPX303N

• Current, Switching: 80 mA
• Ip Rating: IP50
• Mounting Type: Flat Surface
• Output: NPN
• Range, Measurement: 13 mm
• Sensing Mode: Slot
• Technology: Photoelectric
• Termination: 3-Wire Connector
• Voltage, Supply: 24 VDC
• Voltage Range: 12-24 VDC
• Load Rating: 80 mA
• Enclosure Rating: IP50
• Dimensions: 26 mm L x 7.6 mm W x 26 mm H
• Function: Vane
• Indicator: Modulated Light
• Light Source: Infrared Light
• Primary Type: Photoelectric
• Voltage, Switching: 24 VDC

Specifications
J RATINGS
Note: 1. The indicator is a GaP red LED (peak emission wave-
J CHARACTERISTICS
Item
Supply voltage
Current consumption
Slot width
Standard reference object
Differential distance
Control output
Output
configuration
Indicator
(S
(See note 1.)
Response frequency (See note 2.)
Light source
Receiver
Connecting method
Ambient illumination
Enclosure ratings
Ambient temperature
Ambient humidity
Vibration resistance
Shock resistance
Cable length
g
2. The response frequency was measured by detecting
t 1 )
length: 700 nm).
the following disks rotating.
p
Transistor on output stage
without detecting object
Transistor on output stage
with detecting object
Without detecting object
With detecting object
Operating
Storage
Operating
Sensing face: fluorescent light/incandescent light: 3,000 ℓ x max.
IP50
-10° to 55°C (14°F to 131°F)
-25° to 65°C (-13°F to 149°F)
Destruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hrs each in X, Y, and Z directions
Destruction: 500 m/s
5 m max. (AWG24 min.)
35% to 85%
EE-SPX303
12 to 24 VDC ±10%, ripple
(p-p): 5% max.
Average: 15 mA max.; Peak: 50 mA max.
13 mm
Opaque: 0.5 x 1 mm
0.05 mm max.
At 5 to 24 VDC: 80 mA load current (I
When driving TTL: 10 mA load current (I
OFF
ON
ON
OFF
500 Hz
GaAs infrared LED (pulse-modulated) with a peak wavelength of 940 nm
Si photo-diode with a sensing wavelength of 850 nm max.
Connector EE-1001/1006; solder terminals/cordset
2
(approx. 50G) for 3 times each in X, Y, and Z directions
2
min.
2 mm
EE-SPX303-1
5VDC ±10%, ripple
(p-p): 5% max.
2 mm
C
) with a residual voltage of 1.0 V max.
C
) with a residual voltage of 0.4 V max.
2 mm
Disk
EE-SPX403
12 to 24 VDC ±10%, ripple
(p-p): 5% max.
ON
OFF
2