HFA30PB120PBF Vishay PCS, HFA30PB120PBF Datasheet - Page 4
HFA30PB120PBF
Manufacturer Part Number
HFA30PB120PBF
Description
Diode, HEXFRED, 1200V 30A, TO-247 (2 Pin)
Manufacturer
Vishay PCS
Datasheet
1.HFA30PB120PBF.pdf
(4 pages)
Specifications of HFA30PB120PBF
Capacitance, Junction
75 pF
Configuration
Common Cathode
Current, Forward
30 A
Current, Surge
120 A
Package Type
TO-247AC Modified
Power Dissipation
350 W
Primary Type
Rectifier
Resistance, Thermal, Junction To Case
0.36 K/W
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
47 ns
Voltage, Forward
4.1 V
Voltage, Reverse
1200 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HFA30PB120PBF
Manufacturer:
Vishay Semiconductors
Quantity:
54
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
SYMBOL
DIMENSIONS in millimeters and inches
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
ΦP to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
A1
A2
D1
b1
b2
b3
b4
b5
c1
D
A
b
c
Planting
19.71
13.08
(2) R/2
MIN.
MILLIMETERS
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
(5) L1
2 x R
D
(2)
2 x b2
3 x b
(c)
B
C
Section C - C, D - D, E - E
MAX.
0.098
20.70
5.31
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
1
-
(b1, b3, b5)
(b, b2, b4)
2
b4
E
(3)
E/2
0.183
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
1.50
(4)
3
2 x e
INCHES
S
c1
Base metal
D
L
MAX.
0.209
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
2.49
-
See view B
TO-247 modified
NOTES
3
4
D D E
A
A1
View B
C
A2
D
A
A
E
SYMBOL
C
ΦP1
ΦK
ΦP
D2
E1
L1
E
N
Q
R
S
e
L
C
Thermal pad
15.29
13.72
14.20
0.452
MIN.
MILLIMETERS
3.71
0.51
3.56
5.31
Vishay High Power Products
D2
-
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
4. - Drain
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
(6) ΦP
5.46 BSC
7.62 BSC
5.51 BSC
2.54
Outline Dimensions
MAX.
15.87
16.10
4.29
6.98
A
1.30
3.66
5.69
5.49
-
View A - A
(4)
E1
4
0.020
0.602
0.540
0.559
0.146
0.209
0.178
MIN.
0.14
(Datum B)
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
-
0.215 BSC
0.217 BSC
INCHES
ΦP1
0.010
3
D1 (4)
MAX.
0.051
0.625
0.634
0.169
0.144
0.275
0.224
0.216
-
NOTES
3
1