IRFD9010PBF Vishay PCS, IRFD9010PBF Datasheet

IRFD9010PBF

Manufacturer Part Number

IRFD9010PBF

Description

MOSFET, Power; P-Ch; 60V 1.100A HEXDIP

Manufacturer

Vishay PCS

Datasheet

1.IRFD9010PBF.pdf (7 pages)

Specifications of IRFD9010PBF

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Current page: 1 of 7
Download datasheet (126Kb)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91405

S10-0998-Rev. A, 26-Apr-10

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Inductive Current, Clamped

Inductive Current, Unclamped (Avalanche Current)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

DS(on)

(Max.) (nC)

(nC)

(V)

(nC)

≤ - 4.0 A, dI/dt ≤ 75 A/μs, V

= - 25 V, starting T

(Ω)

HVMDIP

= 25 °C, L = 52 mH, R

≤ V

= - 10 V

, T

P-Channel MOSFET

Single

- 50

≤ 175 °C.

3.8

4.1

= 25 Ω, I

= 25 °C, unless otherwise noted)

Power MOSFET

0.50

L = 100 µH see fig. 14

at - 10 V

= - 2.0 A (see fig. 12).

see fig. 15

for 10 s

= 25 °C

HVMDIP

IRFD9010PbF

SiHFD9010-E3

IRFD9010

SiHFD9010

= 100 °C

FEATURES

• For Automatic Insertion

• Compact, End Stackable

• Fast Switching

• Low Drive Current

• Easy Paralleled

• Excellent Temperature Stability

• P-Channel Versatility

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The HVMDIP technology is the key to Vishay’s advanced

line of power MOSFET transistors. The efficient geometry

and unique processing of the HVMDIP design achieves

very

transconductance and extreme device ruggedness.

The p-channel HVMDIPs are designed for application which

require the convenience of reverse polarity operation. They

retain all of the features of the more common n-channel

HVMDIPs such as voltage control, very fast switching, ease

of paralleling, and excellent temperature stability.

P-channels HVMDIPs are intended for use in power stages

where complementary symmetry with n-channel devices

offers circuit simplification. They are also very useful in drive

stages because of the circuit versatility offered by the

reverse polarity connection. Applications include motor

control, audio amplifiers, switched mode converters, control

circuits and pulse amplifiers.

= 25 °C

low

SYMBOL

on-state

, T

stg

IRFD9010, SiHFD9010

resistance

- 55 to + 150

LIMIT

- 0.68

300

± 20

- 1.1

- 8.8

0.01

- 8.8

- 1.5

- 50

Vishay Siliconix

combined

www.vishay.com

with

UNIT

W/°C

°C

high

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IRFD9010PBF Summary of contents

Page 1

... They are also very useful in drive P-Channel MOSFET stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. HVMDIP IRFD9010PbF SiHFD9010-E3 IRFD9010 SiHFD9010 = 25 °C, unless otherwise noted ° ...

Page 2

IRFD9010, SiHFD9010 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain ...

Page 3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted μs Pulse Width Drain-to-Source Voltage (V) GS Fig Typical Output Characteristics 10 80 μs ...

Page 4

IRFD9010, SiHFD9010 Vishay Siliconix 100 T = 150 ° ° 0 Source-to-Drain Voltage (V) SD Fig Typical Source-Drain Diode Forward Voltage 100 Operation in ...

Page 5

Single Pulse (Thermal Response) 0.1 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U ...

Page 6

IRFD9010, SiHFD9010 Vishay Siliconix D.U. Compliment N-Channel of D.U.T. for driver Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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