IRFBE30PBF Vishay PCS, IRFBE30PBF Datasheet - Page 2
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IRFBE30PBF
Manufacturer Part Number
IRFBE30PBF
Description
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3 Ohms; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
Manufacturer
Vishay PCS
Datasheet
1.IRFBE30PBF.pdf
(3 pages)
Specifications of IRFBE30PBF
Current, Drain
4.1 A
Gate Charge, Total
78 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
3 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
82 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
2.5 S
Voltage, Breakdown, Drain To Source
800 V
Voltage, Forward, Diode
1.8 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBE30PBF
Manufacturer:
SANKEN
Quantity:
3 000
Company:
Part Number:
IRFBE30PBF
Manufacturer:
VISHAY
Quantity:
140
Part Number:
IRFBE30PBF
Manufacturer:
IR
Quantity:
20 000
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