HFA16PB120PBF Vishay PCS, HFA16PB120PBF Datasheet

HFA16PB120PBF

Manufacturer Part Number

HFA16PB120PBF

Description

Diode, HEXFRED, 1200V 16A, TO-247 (2 Pin)

Manufacturer

Vishay PCS

Datasheet

1.HFA16PB120PBF.pdf (7 pages)

Specifications of HFA16PB120PBF

Capacitance, Junction

40 pF

Configuration

Common Cathode

Current, Forward

16 A

Current, Surge

190 A

Package Type

TO-247AC Modified

Power Dissipation

151 W

Primary Type

Rectifier

Resistance, Thermal, Junction To Case

0.83 K/W

Speed, Switching

Ultrafast

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Time, Recovery

30 ns

Voltage, Forward

3 V

Voltage, Reverse

1200 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HFA16PB120PBF

Manufacturer:

MICROCHIP

Quantity:

1 001

Company:

H&T Electronics

Part Number:

HFA16PB120PBF

Quantity:

2 000

Company:

H&T Electronics

Part Number:

HFA16PB120PBF

Quantity:

70 000

Company:

H&T Electronics

Part Number:

HFA16PB120PBF

Quantity:

70 000

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* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94057

Revision: 25-Jul-08

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

(rec)M

/dt (typical) at 125 °C

at 16 A at 25 °C

RRM

(maximum)

(typical)

F(AV)

(typical)

TO-247AC modified

Anode

Cathode

to base

Ultrafast Soft Recovery Diode, 16 A

Anode

For technical questions, contact: diodes-tech@vishay.com

76 A/µs

1200 V

260 nC

150 °C

30 ns

3.0 V

5.8 A

16 A

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

TEST CONDITIONS

= 100 °C

= 25 °C

= 100 °C

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA16PB120 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 1200 V and 16 A continuous current, the

HFA16PB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

extremely low values of peak recovery current (I

does not exhibit any tendency to “snap-off” during the

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA16PB120 is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

portion of recovery. The HEXFRED features combine to

RRM

Vishay High Power Products

- 55 to + 150

VALUES

HFA16PB120PbF

1200

190

151

product line features

www.vishay.com

UNITS

°C

RRM

RoHS*

COMPLIANT

Available

Pb-free

) and

Related parts for HFA16PB120PBF

HFA16PB120PBF Summary of contents

Page 1

... SYMBOL TEST CONDITIONS 100 ° FSM I FRM ° 100 ° Stg For technical questions, contact: diodes-tech@vishay.com HFA16PB120PbF Vishay High Power Products RRM rr ® product line features VALUES UNITS 1200 16 190 64 151 150 °C www.vishay.com Pb-free Available RoHS* COMPLIANT ) and RRM ...

Page 2

... HFA16PB120PbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C Series inductance L S DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL t rr Reverse recovery time t rr1 See fig rr2 ...

Page 3

... FM Fig Typical Junction Capacitance vs. Reverse Voltage Single Pulse (Thermal Resistance) 0.001 0.01 0.1 thJC For technical questions, contact: diodes-tech@vishay.com HFA16PB120PbF Vishay High Power Products T = 150° 125° 25° 200 400 600 800 Fig Typical Values of Reverse Current vs. ...

Page 4

... HFA16PB120PbF Vishay High Power Products 270 220 170 120 200V 125° 25° Fig Typical Reverse Recovery Time vs 200V 125 ° 25° Fig Typical Recovery Current vs. dI www.vishay.com 4 HEXFRED Ultrafast Soft Recovery Diode 1600 1400 1200 1000 /dt (Per Leg) F 10000 1000 ...

Page 5

... F ( area under curve defined and I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions For technical questions, contact: diodes-tech@vishay.com HFA16PB120PbF Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... HFA16PB120PbF Vishay High Power Products ORDERING INFORMATION TABLE Device code Dimensions Part marking information www.vishay.com 6 HEXFRED Ultrafast Soft Recovery Diode 120 PbF ® HEXFRED family 2 - Process designator Electron irradiated B = Platinum diffused 3 - Current rating ( Package outline (PB = TO-247, 2 pins Voltage rating (120 = 1200 V) ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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