VTE3372LAH Excelitas Technologies Sensors, VTE3372LAH Datasheet
VTE3372LAH
Manufacturer Part Number
VTE3372LAH
Description
EMITTER, IR, 3MM DIAMETER, 20 MA
Manufacturer
Excelitas Technologies Sensors
Datasheet
1.VTE3372LAH.pdf
(1 pages)
Specifications of VTE3372LAH
Lead Free Status / Rohs Status
RoHS Compliant part
DESCRIPTION
This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small
area, GaAlAs, 880 nm, high efficiency IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C
Maximum Temperatures
Continuous Power Dissipation:
Maximum Continuous Current:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7
GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package — 880 n
Refer to General Product Notes, page 2.
Part Number
VTE3372LAH
VTE3374LAH
Storage and Operating:
Derate above 30°C:
Derate above 30°C:
Min.
2.0
4.0
mW/cm
E
e
2
Typ.
RoHS Compliant
2.6
5.2
Irradiance
distance
10.16
10.16
mm
PACKAGE DIMENSIONS
Condition
-40°C to 100°C
100 mW
1.43 mW/°C
50 mA
0.71 mA/°C
2.5 A
-.8%/°C
Diameter
Output
mm
2.1
2.1
(unless otherwise noted)
Intensity
Radiant
mW/sr
Min.
121
2.0
4.1
I
e
(See also GaAlAs curves, pages 108-110)
Maximum Reverse Voltage:
Maximum Reverse Current @ V
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
Lead Soldering Temperature:
Phone: Phone: 877-734-6786 Fax: 450-424-3413
Total Power
Rise:1.0 µs Fall: 1.0 µs
(1.6 mm from case, 5 seconds max.)
mW
Typ.
P
3.0
5.0
CASE 50A Long T-1 (3 mm)
O
CHIP SIZE: .011" x .011"
inch (mm)
VTE3372LAH, 74LAH
(Pulsed)
Current
F
Test
= 20 mA
mA
I
20
20
FT
R
= 5V:
Typ.
1.3
1.3
Forward Drop
@ I
Volts
V
F
FT
Max.
1.8
1.8
www.perkinelmer.com/opto
5.0V
10 µA
880 nm
14 pF
260°C
Half Power Beam
Angle
Typ.
±10°
±10°
1/2
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