IRF740APBF Vishay PCS, IRF740APBF Datasheet
IRF740APBF
Manufacturer Part Number
IRF740APBF
Description
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 0.55Ohm; ID 10A; TO-220AB; PD 125W; VGS +/-30V
Manufacturer
Vishay PCS
Datasheet
1.IRF740APBF.pdf
(3 pages)
Specifications of IRF740APBF
Current, Drain
10 A
Gate Charge, Total
36 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
0.55 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
24 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
4.9 S
Voltage, Breakdown, Drain To Source
400 V
Voltage, Forward, Diode
2 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
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Manufacturer
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l
l
l
l
l
l
l
l
l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@T
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Effective Coss specified (
Single transistor Flyback Xfmr. Reset
Single Transistor Forward Xfmr. Reset
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
( Both for US Line Input only )
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
400V
DSS
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
TO-220AB
Max.
125
± 30
6.3
1.0
5.9
10
40
0.55Ω
®
Power MOSFET
G
D
S
Units
W/°C
V/ns
10A
°C
W
A
V
I
D
1
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IRF740APBF Summary of contents
Page 1
Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free l Low Gate Charge Qg results in Simple l Drive Requirement Improved Gate, Avalanche and dynamic l dv/dt Ruggedness Fully Characterized Capacitance ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
Page 3
...