30CPU04PBF Vishay PCS, 30CPU04PBF Datasheet - Page 4

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30CPU04PBF

Manufacturer Part Number
30CPU04PBF
Description
Diode, Ultrafast, 400V 30A, TO-247AC
Manufacturer
Vishay PCS
Datasheet

Specifications of 30CPU04PBF

Capacitance, Junction
28 pF
Configuration
Common Cathode
Current, Forward
30 A
Current, Surge
200 A
Package Type
TO-247AC
Primary Type
Rectifier
Resistance, Thermal, Junction To Case
1.5 °C/W
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Time, Recovery
60 ns
Voltage, Forward
1.17 V
Voltage, Reverse
400 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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Manufacturer
Quantity
Price
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30CPU04PBF
Manufacturer:
VISHAY
Quantity:
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Part Number:
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Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
SYMBOL
DIMENSIONS in millimeters and inches
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
A1
A2
D1
b1
b2
b3
b4
b5
c1
D
A
b
c
19.71
13.08
MIN.
MILLIMETERS
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
Planting
(2) R/2
0.10
(5) L1
2 x R
(2)
2 x b2
D
3 x b
M
(c)
B
C
C
MAX.
20.70
Section C - C, D - D, E - E
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
A
-
M
1
(b1, b3, b5)
(b, b2, b4)
2
b4
E
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
(3)
E/2
(4)
INCHES
3
2 x e
S
c1
Base metal
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
D
L
-
See view B
NOTES
3
4
TO-247
D D E
A
A1
View B
C
A2
D
A
A
E
SYMBOL
C
FP1
D2
FK
FP
E1
L1
E
N
Q
R
S
e
L
C
Thermal pad
Ø K
15.29
13.72
14.20
0.452
MIN.
MILLIMETERS
0.51
3.71
3.56
5.31
Vishay High Power Products
D2
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
4. - Drain
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
(6) Ø P
-
5.46 BSC
7.62 BSC
5.51 BSC
M
D
2.54
B
Outline Dimensions
M
A
MAX.
15.87
16.10
4.29
3.66
1.30
6.98
5.69
5.49
0.01
View A - A
-
(4)
E1
4
M
D
(Datum B)
B
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
0.020
0.602
0.540
0.559
0.146
0.209
0.178
MIN.
0.14
M
-
FP1
0.215 BSC
0.217 BSC
INCHES
0.010
D1 (4)
3
MAX.
0.051
0.625
0.634
0.169
0.144
0.275
0.224
0.216
-
NOTES
3
1

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