1N4448T/R Philips Semiconductors, 1N4448T/R Datasheet - Page 4

• Manufacturer Part Number: 1N4448T/R
• Description: DIODE SW TAPE AXIAL
• Manufacturer: Philips Semiconductors

Specifications of 1N4448T/R

• Capacitance, Junction: 4 pF
• Current, Forward: 200 mA
• Current, Reverse: 25 nA
• Current, Surge: 1 A
• Package Type: SOD-27 (DO-35)
• Power Dissipation: 500 mW
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +200 °C
• Time, Recovery: 4 ns
• Voltage, Forward: 1 V
• Voltage, Reverse: 100 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Philips Semiconductors
PACKAGE OUTLINE
High-speed diodes
Hermetically sealed glass package; axial leaded; 2 leads
DIMENSIONS (mm are the original dimensions)
Note
1. The marking band indicates the cathode.
UNIT
mm
VERSION
OUTLINE
SOD27
max.
0.56
b
max.
D
1.85
D
A24
IEC
max.
4.25
G 1
min.
25.4
L
JEDEC
DO-35
REFERENCES
L
SC-40
EIAJ
7
(1)
G 1
PROJECTION
L
EUROPEAN
1N4148; 1N4448
0
scale
1
Product specification
2 mm
ISSUE DATE
b
97-06-09
SOD27