1N5615GP-E3/51 Vishay / Small Signal & Opto Products (SSP), 1N5615GP-E3/51 Datasheet
1N5615GP-E3/51
Manufacturer Part Number
1N5615GP-E3/51
Description
AVALANCHE DIODE
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet
1.1N5615GP-E351.pdf
(3 pages)
Specifications of 1N5615GP-E3/51
Capacitance
25 pF
Capacitance, Junction
25 pF
Current, Forward
1 A
Current, Reverse
0.5 μA
Current, Surge
50 A
Package Type
DO-204AC (DO-15)
Primary Type
Rectifier
Speed, Switching
Fast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Time, Recovery
150 ns
Voltage, Forward
1.2 V
Voltage, Reverse
200 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature
range
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
T
V
I
J
I
F(AV)
FSM
RRM
V
t
I
max.
Glass Passivated Junction Fast Switching Rectifier
rr
R
F
DO-204AC (DO-15)
A
150 ns, 250 ns, 300 ns, 500 ns
= 55 °C
A
= 25 °C unless otherwise noted)
200 V to 1000 V
175 °C
0.5 µA
1.0 A
1.2 V
50 A
SYMBOL
T
V
J
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
1N5615GP
200
140
200
FEATURES
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Superectifier structure for high reliability
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
1N5617GP
condition
and WEEE 2002/96/EC
400
280
400
1N5615GP thru 1N5623GP
Vishay General Semiconductor
- 65 to + 175
1N5619GP
600
420
600
1.0
50
1N5621GP
800
560
800
1N5623GP
1000
1000
700
UNIT
°C
V
V
A
A
A
1
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1N5615GP-E3/51 Summary of contents
Page 1
... A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range 1N5615GP thru 1N5623GP Vishay General Semiconductor FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • ...
Page 2
... Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 1.0 A forward voltage Maximum DC reverse T A current at rated blocking voltage Maximum reverse recovery time Typical junction 4 MHz capacitance THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ...
Page 3
... Figure 6. Typical Transient Thermal Impedance DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. 1N5615GP thru 1N5623GP Vishay General Semiconductor ° 1.0 MHz mVp-p sig 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance 0.1 1 ...