1N5615GP-E3/51 Vishay / Small Signal & Opto Products (SSP), 1N5615GP-E3/51 Datasheet
1N5615GP-E3/51
Specifications of 1N5615GP-E3/51
Related parts for 1N5615GP-E3/51
1N5615GP-E3/51 Summary of contents
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... A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range 1N5615GP thru 1N5623GP Vishay General Semiconductor FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • ...
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... Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 1.0 A forward voltage Maximum DC reverse T A current at rated blocking voltage Maximum reverse recovery time Typical junction 4 MHz capacitance THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ...
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... Figure 6. Typical Transient Thermal Impedance DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. 1N5615GP thru 1N5623GP Vishay General Semiconductor ° 1.0 MHz mVp-p sig 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance 0.1 1 ...