25AA1024-I/MF Microchip Technology Inc., 25AA1024-I/MF Datasheet - Page 2
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25AA1024-I/MF
Manufacturer Part Number
25AA1024-I/MF
Description
1024K, 128K X 8 , 1.8V SER EE IND
Manufacturer
Microchip Technology Inc.
Datasheet
1.25AA1024-IMF.pdf
(6 pages)
Specifications of 25AA1024-I/MF
Capacitance, Input
7 pF
Capacitance, Output
7 pF
Current, Input, Leakage
±1 μA
Current, Operating
10 mA (Read), 7 mA (Write)
Current, Output, Leakage
±1
Data Retention
>200 yrs.
Density
1024K
Interface
SPI Bus
Memory Type
Serial EEPROM
Organization
128K×8
Package Type
DFN
Temperature, Operating
-40 to +85 °C
Time, Access
50 ns
Time, Address Hold
500
Time, Address Setup
250
Time, Fall
20 ns
Time, Rise
20 ns
Voltage, Esd
4 kV
Voltage, Input, High
2.8 V
Voltage, Input, Low
0.36 V
Voltage, Output, High
1.3 V
Voltage, Output, Low
0.2 V
Voltage, Supply
1.8 to 5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
25AA1024-I/MF
Manufacturer:
MOLEX
Quantity:
3 000
Part Number:
25AA1024-I/MF
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
25AA1024
1.0
Absolute Maximum Ratings
V
All inputs and outputs w.r.t. V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
TABLE 1-1:
DS21836F-page 2
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Param.
D001
D002
D003
D004
D005
D006
D007
D008
D009
D010
D011
D012
D13
CC
Note:
No.
.............................................................................................................................................................................6.5V
ELECTRICAL CHARACTERISTICS
V
V
V
V
V
V
I
I
C
I
I
I
I
LI
LO
CC
CC
CCS
CCSPD
OL
OL
OH
IH 1
IL 1
IL 2
INT
Sym.
This parameter is periodically sampled and not 100% tested.
Read
Write
DC CHARACTERISTICS
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal capacitance
(all inputs and
outputs)
Operating current
Standby current
Deep power-down
current
Characteristic
SS
......................................................................................................... -0.6V to V
(†)
Industrial (I)*:
Industrial (I):
* Limited industrial temp range.
V
.7 V
CC
Min.
-0.3
-0.3
—
—
—
—
—
—
—
—
—
—
—
-0.2
CC
0.3 V
0.2 V
V
Max.
CC
0.4
0.2
—
±1
±1
10
12
7
5
7
5
1
+1
CC
CC
T
T
A
A
= 0°C to +85°C
= -40°C to +85°C
Units
mA
mA
mA
mA
μA
μA
μA
μA
pF
V
V
V
V
V
V
V
V
I
I
I
CS = V
CS = V
T
V
V
SO = Open
V
SO = Open
V
V
CS = V
V
CS = V
V
OL
OL
OH
A
CC
CC
CC
CC
CC
CC
CC
SS
SS
= 25°C, CLK = 1.0 MHz,
= 2.1 mA
= 1.0 mA, V
= -400 μA
, 85°C
, 85°C
≥ 2.7V
< 2.7V
= 5.0V (Note)
= 5.5V; F
= 2.5V; F
= 5.5V
= 2.5V
CC
CC
CC
CC
© 2008 Microchip Technology Inc.
, V
, V
= 5.5V, Inputs tied to V
= 2.5V, Inputs tied to V
Test Conditions
IN
OUT
V
V
CLK
CLK
CC
CC
= V
CC
= V
= 1.8V to 5.5V
= 2.0V to 5.5V
= 20.0 MHz;
= 10.0 MHz;
SS TO
< 2.5V
SS TO
V
CC
V
CC
CC
CC
CC
+1.0V
or
or