1N5263B-TAP Vishay / Small Signal & Opto Products (SSP), 1N5263B-TAP Datasheet - Page 3

• Manufacturer Part Number: 1N5263B-TAP
• Description: ZENER-DIODE 0.5W, 5%, DO-35
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of 1N5263B-TAP

• Current, Forward: 200 mA
• Current, Reverse: 2.2 mA
• Current, Reverse Leakage: 0.1 μA
• Package Type: DO-35
• Power Dissipation: 500 mW
• Primary Type: Zener
• Temperature, Junction, Maximum: +175 °C
• Voltage, Forward: 1.1 V
• Voltage, Reverse: 56 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

1)
Typical Characteristics
Document Number 85588
Rev. A4, 01-Apr-03
VISHAY
Figure 2. Typical Change of Working Voltage under Operating
Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
95 961 1
95 9598
Partnumber
1000
1N5265B
1N5266B
1N5267B
500
400
300
200
100
100
10
0
1
Figure 1. Thermal Resistance vs. Lead Length
0
0
T
j
=25°C
5
5
Conditions at T
l – Lead Length ( mm )
V
Z
10
– Z-Voltage ( V )
@ I
Voltage
Nominal
Zener
10
T
62
68
75
ZT
V
I
l
L
Z
=constant
, V
=5mA
15
1)
Z
amb
l
15
(T
=25°C
20
Test Current
amb
mA
1.8
1.7
I
= 25 C unless otherwise specified)
ZT
2
20
25
Impedance
Z
Maximum
Dynamic
ZT
185
230
270
@ I
ZT
1)
95 9599
95 9602
Z
Figure 4. Total Power Dissipation vs. Ambient Temperature
Impedance
Figure 3. Typical Change of Working Voltage vs. Junction
Maximum
ZK
Dynamic
0.25 mA
1400
1600
1700
600
500
400
300
200
100
@ I
1.3
1.2
1.1
1.0
0.9
0.8
0
1N5221B to 1N5267B
–60
0
ZK
V
=
Ztn
T
=V
40
amb
0
T
j
of Coeffizient
Zt
Temperature
– Junction Temperature (°C )
/V
– Ambient T emperature(°C )
Typical
+0.097
+0.097
+0.098
Z
@ I
(25°C)
(%/K)
60
80
ZT
Temperature
TK
Vishay Semiconductors
VZ
=10 x 10
120
120
Maximum Reverse Leakage
–4
/K
180
160
0.1
0.1
0.1
I
8 x 10
6 x 10
4 x 10
2 x 10
–2 x 10
–4 x 10
R
A
0
–4
–4
–4
–4
–4
–4
/K
/K
/K
/K
Current
240
200
/K
/K
www.vishay.com
V
47
52
56
V
R
3